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Double heterostructure
A double heterostructure is formed when two semiconductor materials are grown into a "sandwich". One material (such as AlGaAs) is used for the outer…
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3 relations
Electron hole
Quantum well
Semiconductor
Papers overview
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2012
2012
Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure
Ron Gurwitz
,
Asa Tavor
,
+4 authors
V. Narayanamurti
2012
Corpus ID: 120753740
A wurtzite GaAs epilayer grown on a zincblende GaAs substrate by metalorganic chemical vapor deposition is studied by surface…
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2012
2012
In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy
M. Hudait
,
Yan Zhu
,
+4 authors
G. Khodaparast
2012
Corpus ID: 135649814
High-quality epitaxial Ge layers for GaAs/Ge/GaAs heterostructures were grown in situ in an arsenic-free environment on (100) off…
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2007
2007
High resolution transmission electron microscopy of InN
T. Bartel
,
C. Kisielowski
,
P. Specht
,
T. Shubina
,
V. Jmerik
,
S. Ivanov
2007
Corpus ID: 120142454
Hexagonal InN layers were grown by molecular beam epitaxy and studied by high resolution electron microscopy and by…
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2001
2001
Effect of Stress on Impurity-Free Quantum Well Intermixing
P. Deenapanray
,
C. Jagadish
2001
Corpus ID: 55520988
Impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated for SiOx capping layers grown by plasma-enhanced…
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1993
1993
InP/InGaAsP double-heterostructure optoelectronic switch
S. Kovacic
,
B. Robinson
,
J. Simmons
,
D. A. Thompson
IEEE Electron Device Letters
1993
Corpus ID: 22327108
The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The…
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1991
1991
Ultrafast graded double‐heterostructure GaInAs/InP photodiode
Y. Wey
,
D. L. Crawford
,
+5 authors
G. Y. Robinson
1991
Corpus ID: 121803877
Ultrafast graded double‐heterostructure GaInAs/InP p‐i‐n photodiodes grown by gas source molecular beam epitaxy have been…
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1987
1987
High-speed InGaAs(P)/InP double-heterostructure bipolar transistors
R. Nottenburg
,
J. Bischoff
,
M. Panish
,
H. Temkin
IEEE Electron Device Letters
1987
Corpus ID: 8488539
Double-heterostructure InGaAs(P)/InP bipolar transistors ranging in emitter size from 5 × 10 to 100 × 150 µm2have been fabricated…
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1987
1987
Electrical switching speed of the double-heterostructure optoelectronic switch
G. Taylor
,
J. Simmons
,
R. S. Mand
,
A. Cho
IEEE Transactions on Electron Devices
1987
Corpus ID: 22598788
The electrical switching speed of a new double-heterostructure optoelectronic switch (designated DOES) is measured in a…
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Highly Cited
1987
Highly Cited
1987
Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors
S. Tiwari
,
S. Wright
,
A. Kleinsasser
IEEE Transactions on Electron Devices
1987
Corpus ID: 43295989
This paper presents a study of the transport and related properties of GaAs double heterostructure bipolar junction transistors…
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1979
1979
Phase and group indices for double heterostructure lasers
J. Buus
,
M. Adams
1979
Corpus ID: 123586593
Various models for calculation of refractive indices in semiconductor laser materials are discussed and the results for GalnAsP…
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