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Double heterostructure
A double heterostructure is formed when two semiconductor materials are grown into a "sandwich". One material (such as AlGaAs) is used for the outer…
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3 relations
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Semiconductor
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Compact current pulse-pumped GaAs–AlGaAs laser diode structures for generating high peak-power (1–50 watt) picosecond-range single optical pulses
B. Lanz
2016
Corpus ID: 138617090
Although gain-switching is a simple, well-established technique for obtaining ultrashort optical pulses generated with laser…
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2012
2012
Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure
Ron Gurwitz
,
Asa Tavor
,
+4 authors
V. Narayanamurti
2012
Corpus ID: 120753740
A wurtzite GaAs epilayer grown on a zincblende GaAs substrate by metalorganic chemical vapor deposition is studied by surface…
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2004
2004
Zen and the art of Free Software: know your user, know yourself
Rechtlicher Hinweis
,
Dieser Beitrag
2004
Corpus ID: 61284421
2004
2004
The temperature characteristics of AlGaN/GaN double heterostructure HEMTs
Changzhi Lu
,
Shiwei Feng
,
Dongfeng Wang
,
X. Zhu
,
Zhifang Fan
,
H. Morkoç
Proceedings. 7th International Conference on…
2004
Corpus ID: 26785894
AlGaN/GaN double heterostructure high electron mobility transistors (DH-HEMT's) with a 2.0 /spl mu/m gate length and a 4 /spl mu…
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Review
2000
Review
2000
GENERAL FEATURES OF SEMICONDUCTOR LASERS
R. Ghiţă
2000
Corpus ID: 55084979
Laser diodes are optoelectronic devices based on lasing properties of semiconduc- tor compounds from AIIIBV and AIVBVI systems…
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1998
1998
GaInAsSb/GaSb double heterostructure light emitting diodes fabricated by LPE from Sb-rich melts
D. Akhmedov
,
A. G. Deryagin
,
+4 authors
V. I. Vasil’ev
1998
Corpus ID: 137351977
In this paper we report the realization of GaSb/Ga 1-x In x A y Sb 1-y (0.9≤x≤0.98) double heterostructures (DH) for light…
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1991
1991
Ultrafast graded double‐heterostructure GaInAs/InP photodiode
Y. Wey
,
D. L. Crawford
,
+5 authors
G. Y. Robinson
1991
Corpus ID: 121803877
Ultrafast graded double‐heterostructure GaInAs/InP p‐i‐n photodiodes grown by gas source molecular beam epitaxy have been…
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1985
1985
Continuous-wave separate-confinement InGaAsP/GaAs double heterostructure 77-mW (T = 300 K, lambda = 0. 87. mu. ) laser grown by liquid epitaxy
D. Garbuzov
,
I. N. Arsent’ev
,
L. Vavilova
,
A. Tikunov
,
E. Tulashvili
1985
Corpus ID: 108064467
The results obtained in an investigation of the wide lasers with different resonator lengths prepared from InGaAsP/GaAs are given…
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1977
1977
Peltier cooled PbSe double-heterostructure lasers for IR-gas spectroscopy
H. Preier
,
M. Bleicher
,
W. Riedel
,
H. Pfeiffer
,
H. Maier
1977
Corpus ID: 89607875
PbS−PbSe−PbS double-heterostructure lasers have been pulse-operated at about 200 K mounted on 4 stage thermoelectric coolers…
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1976
1976
Derivative measurements of light-current-voltage characteristics of (AL, GA)as double-heterostructure lasers
R. Dixon
Bell Labs technical journal
1976
Corpus ID: 7822187
A modulation and detection scheme for applying derivative techniques to the investigation of stripe geometry (Al, Ga)As double…
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