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Diffusion current

Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons). The drift current, by contrast… (More)
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Topic mentions per year

Topic mentions per year

1945-2018
051019452017

Related topics

Related topics

5 relations
Depletion regionHaynes–Shockley experimentP–n diodeP–n junction
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Related mentions per year

Related mentions per year

1936-2018
19401960198020002020
Diffusion current
Semiconductor
Depletion region
P–n junction
P–n diode
Haynes–Shockley experiment

Papers overview

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2014
2014
Role of Lateral Diffusion Current in Perimeter-Dependent Current of MOS(p) Tunneling Temperature Sensors
P-type metal-oxide-semiconductor (MOS) tunneling temperature sensors with two different gate electrodes (area = 2.25×10-4 and 9… (More)
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2013
2013
Modeling Sub-Threshold Current–Voltage Characteristics in Thin Film Transistors
In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous… (More)
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2011
2011
Edge Elements and Current Diffusion
Current flow in the neighborhood of sharp conducting edges and corners is encountered in many applications of computational… (More)
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2011
2011
Nondestructive local analysis of current-voltage characteristics of solar cells by lock-in thermography
By evaluating dark lock-in thermography images taken at one reverse and three forward biases, images of all two-diode-parameters… (More)
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2010
2010
Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)
Current density-voltage characteristics of Si p+ -i-n+ Esaki tunneling diodes are presented, which are grown with low-temperature… (More)
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2009
2009
On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ Junctions
The temperature dependence of the trap-assisted tunneling (TAT) current component in Ge p+n junctions has been studied between… (More)
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2008
2008
Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$\mu{\hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers
We present an experimental and theoretical investigation of the temperature dependence of the threshold current for double… (More)
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2005
2005
Analysis and modeling of DMOS FBSOA limited by n-p-n leakage diffusion current
Failure of DMOS self-heated in saturation below the avalanche threshold is usually related to an activation of the parasitic n-p… (More)
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2003
2003
Diffusion Processes for Integrated Waveguide Fabrication in Glasses: a Solid-state Electrochemical Approach
-The process of solid-state film ion exchange (Ag +-Na +) in glass substrates for the fabrication of integrated, optical… (More)
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1981
1981
Three-dimensional numerical analysis of diffusion current and quantum efficiency of small area Hg1-xCdxTe photodiodes
Numerical techniques were used to solve the 3-dimensional diffusion equation for planar circular n<sup>+</sup>on p Hg<inf>1-x… (More)
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