Skip to search formSkip to main contentSkip to account menu

Diffusion current

Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons). The drift current, by contrast… 
Wikipedia (opens in a new tab)

Related topics

Related topics

5 relations
Depletion regionHaynes–Shockley experimentP–n diodeP–n junction

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Drift-diffusion current in organic diodes
Because the conductivity of organic semiconductors is very low, a useful model for the organic diode consists of treating the… 
2015
2015
Carrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs
In this paper, we propose a new method to extract the free carrier mobility in junctionless (JL) double-gate FETs biased in… 
2014
2014
A 0.5-V P-Well/Deep N-Well Photodetector in 65-nm CMOS for Monolithic 850-nm Optical Receivers
This letter presents the design, measurement results, and modeling formula of a P-well/deep N-well photodetector (PD) realized in… 
2011
2011
An ionic bottle for high-speed, long-retention memristive devices
We propose a new type of bipolar resistive switch or memristive device, based on an ionic bottle, which is characterized by both… 
2011
2011
On the Frequency Response and Optimum Designs for Maximum Bandwidth of a Lateral Silicon Photodetector
In this paper, the photocurrent in a CMOS compatible Si photodetector is calculated considering the effect of diffusion of… 
2007
2007
An investigation on near wall transport characteristics in an adiabatic upward gas–liquid two-phase slug flow
AbstractThe near-wall transport characteristics, inclusive of mass transfer coefficient and wall shear stress, which have a great… 
2005
2005
Analysis and modeling of DMOS FBSOA limited by n-p-n leakage diffusion current
Failure of DMOS self-heated in saturation below the avalanche threshold is usually related to an activation of the parasitic n-p… 
2004
2004
Study of current fluctuations in deep-submicron Si/SiGe n-channel MOSFET: impact of relevant technological parameters on the thermal noise performance
We present a study of the thermal noise locally generated in a Si/SiGe MOSFET. We use a Langevin stochastic noise source model in… 
1978
1978
An application of the generalized Fokker–Planck equation to the dynamics of dilute polymer solutions
The nonlinear formalism developed by Zwanzig and Mori is utilized to derive a kinetic equation for the distribution of monomer… 
1976
1976
On the diffusion current in semiconductors
The correct form of the diffusion component of current in semiconductors is derived using a perturbation solution of the… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)