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Die shrink

Known as: Semiconductor scaling, 55 nanometer, 40 nanometer 
The term die shrink (sometimes optical shrink or process shrink) refers to a simple semiconductor scaling of semiconductor devices, mainly… 
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Related topics

Related topics

31 relations
Apple mobile application processorsArrandaleAthlonBaikal CPU

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Total Ionizing Dose Effect on Ring Oscillator Frequency in 28-nm FD-SOI Technology
The total ionizing dose (TID) is a mechanism that threatens the reliability of transistors under radiation. In the literature, we… 
2017
2017
Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology
Measuring single-event transient (SET) pulse widths is critical for developing proper mitigation schemes to single-event effects… 
2016
2016
A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170$^{\circ}$ C
First-ever 28 nm embedded split-gate MONOS (SG-MONOS) flash macros have been developed to increase memory capacity embedded in… 
2015
2015
Steamroller Module and Adaptive Clocking System in 28 nm CMOS
This work describes the physical design implementation of the AMD “Steamroller” module and adaptive clocking system that are both… 
2015
2015
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis
We report on soft error rate measurements on 28 nm commercial FDSOI SRAM bitcells under alpha irradiation. The technology proves… 
2014
2014
Evaluation of Pp/Clay Composites as Soundproofing Material
Noise should be disappeared or reduced by using soundproofing materials in our daily life. Polypropylene (PP)/Clay composites are… 
2013
2013
Sub-100 nanometer transverse gratings written by femtosecond laser pulses on a titanium surface
One-dimensional transverse (perpendicular to the laser polarization) gratings with periods Λ ≈ 50–60 nm were observed on a… 
2012
2012
An accurate MOSFET aging model for 28 nm integrated circuit simulation
Highly Cited
2003
Highly Cited
2003
New Millable Polyurethane/Organoclay Nanocomposite: Preparation, Characterization and Properties
Novel millable polyurethane (PU)/organoclay nanocomposites have been successfully prepared by conventional transformation… 
Highly Cited
2003
Highly Cited
2003
Silicon technology tradeoffs for radio-frequency/mixed-signal (quote)systems-on-a-chip(quote)
Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for… 
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