A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170$^{\circ}$ C

@article{Taito2016A2N,
  title={A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170\$^\{\circ\}\$ C},
  author={Yasuhiko Taito and Takashi Kono and Masaya Nakano and Tomoya Saito and Takashi Ito and Kenji Noguchi and Hideto Hidaka and Tadaaki Yamauchi},
  journal={IEEE Journal of Solid-State Circuits},
  year={2016},
  volume={51},
  pages={213-221}
}
First-ever 28 nm embedded split-gate MONOS (SG-MONOS) flash macros have been developed to increase memory capacity embedded in micro controller units and to improve performance over wide junction temperature range from -40°C to 170 °C as demanded strongly in automotive uses. [] Key Method Temperature-adaptive step pulse erase control (TASPEC) improves the TDDB lifetime of dielectric films between metal interconnect layers by three times. TASPEC is particularly useful for a data flash macro with one million…
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