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Debian
Known as:
Debian LTS
, Woody (Debian)
, DPL
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Debian (/ˈdɛbiən/) is a Unix-like computer operating system that is composed entirely of free software, most of which is under the GNU General Public…
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Related topics
Related topics
50 relations
389 Directory Server
Arch Linux
Buffalo network-attached storage series
Clang
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2003
Highly Cited
2003
WOODY PLANT ESTABLISHMENT AND SPATIAL HETEROGENEITY IN GRASSLANDS
P. N. Jurena
,
S. Archer
2003
Corpus ID: 14810782
Root exclusion experiments demonstrated the importance of belowground competition between grasses and Prosopis glandulosa (honey…
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Highly Cited
2002
Highly Cited
2002
Template Growth of Photoconductive Metal−CdSe−Metal Nanowires
David J. Pena
,
J. Mbindyo
,
+4 authors
T. Mayer
2002
Corpus ID: 97477454
Metal−CdSe−metal (metal = Au, Ni) nanowires were grown by electrochemical replication of porous aluminum oxide and polycarbonate…
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Highly Cited
1999
Highly Cited
1999
Printing Process Suitable for Reel-to-Reel Production of High-Performance Organic Transistors and Circuits
J. Rogers
,
Zhenan Bao
,
A. Makhija
,
P. Braun
Advances in Materials
1999
Corpus ID: 17100558
cause appropriate compounds now exist for many types of devices, research has expanded to include patterning methods that can…
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Highly Cited
1999
Highly Cited
1999
Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment
Ja‐Soon Jang
,
S. Park
,
T. Seong
1999
Corpus ID: 97790760
Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after…
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Highly Cited
1998
Highly Cited
1998
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
M. Iwaya
,
T. Takeuchi
,
S. Yamaguchi
,
C. Wetzel
,
H. Amano
,
I. Akasaki
1998
Corpus ID: 120110603
The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by…
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Highly Cited
1993
Highly Cited
1993
TMAH/IPA anisotropic etching characteristics
Á. Merlos
,
M. Acero
,
M. Bao
,
J. Bausells
,
J. Esteve
1993
Corpus ID: 7621227
Highly Cited
1993
Highly Cited
1993
Fabrication of silicon nanostructures with a scanning tunneling microscope
E. Snow
,
P. Campbell
,
P. McMarr
1993
Corpus ID: 16530297
A technique is presented for fabricating Si nanostructures with a scanning tunneling microscope operated in air. The process…
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Highly Cited
1985
Highly Cited
1985
Development of the Self-Aligned Titanium Silicide Process for VLSI Applications
M. Alperin
,
T. Holloway
,
R. Haken
,
C. Gosmeyer
,
R. Karnaugh
,
W. D. Parmantie
IEEE Journal of Solid-State Circuits
1985
Corpus ID: 26123900
A manufacturable self-aligned titanium silicide process which simultaneously silicides both polysilicon gates and junctions has…
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Review
1985
Review
1985
Thermal nitridation of Si and SiO2for VLSI
M. Moslehi
,
K. C. Saraswat
IEEE Transactions on Electron Devices
1985
Corpus ID: 1004044
This paper presents an extensive review of our work on thermal nitridation of Si and SiO2. High-quality ultrathin films of…
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Highly Cited
1979
Highly Cited
1979
Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds
J. Coburn
,
E. Kay
1979
Corpus ID: 62183402
Mass spectrometric sampling of fluorocarbon glow discharges and in situ measurements of the etch rate of Si and SiO2, with quartz…
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