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DHBT-NE-1

Known as: dihydrobenzothiazine-7-(1-hydroxy-2-aminoethyl)-3,4-dihydro-5-hydroxy-2H-1,4-benzothiazine-3-carboxylic acid 
National Institutes of Health

Related topics

Related topics

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Broader (1)

Thiazines

Papers overview

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2018
2018
D-Band MMIC Design for High Datarate Wireless and Wire-Bound Communication Based on State-of-the-Art InP DHBT and SiGe BiCMOS Processes
This papers describes ongoing work to demonstrate high datarate wireless and wireline communication based on InP DHBT and SiGe… 
2014
2014
InP DHBT wideband amplifiers with up to 235 GHz bandwidth
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction bipolar transistor technology… 
2014
2014
A 83 GHz InP DHBT static frequency divider
A static frequency divider is presented using 0.7 m InP DHBTs with 280 GHz ft/fmax. The divider is based on ECL master–slave D… 
2012
2012
A 79 GHz sub-harmonic mixer design using a 1 um InP DHBT technology
This paper presents a 79 GHz sub-harmonic mixer (SHM) design based on a self-developed 1 um InP DHBT process. In this design, a… 
2010
2010
Sensitivity of a 20-GS/s InP DHBT latched comparator
We present simulations and measurements of the sensitivity of a master-slave emitter-coupled logic (ECL) latched comparator… 
2008
2008
Current gain enhancement in GaAsSb/InP - DHBT type grown by MBE with a graded composition AlInP emitter
Al<sub>x</sub>In<sub>1-X</sub>P/GaAs<sub>0.51</sub>Sb<sub>0.49</sub> DHBTs with various aluminum contents have been grown by MBE… 
2008
2008
mm-wave op-amps for low distortion amplification with high OIP3/PDC ratio ≫ 100 at 2 GHz
We here report mm-wave amplifiers employing strong global negative feedback to provide very low intermodulation distortion, using… 
2006
2006
Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DHBT technology
A high-gain and wide-band variable gain amplifier (VGA) is developed using 300-GHz InP-InGaAs double-heterojunction bipolar… 
2006
2006
Design and Test of InP DHBT ICs for a 100 Gb/s Demonstrator System
We report on design and test of state-of-the-art building blocks for a 100 Gb/s demonstrator system: a 165 Gb/s 4:1 multiplexer… 
2005
2005
An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits
Indium-phosphidedouble-heterojunctionbipolar transistors(InP DHBTs)belong to the fastesttransistor technologies today. The… 
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