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Sense amplifiers are one of the important circuits in the CMOS memories as they have a greater impact on the access time and… Expand Die-stacked DRAMs have been proposed that combine multiple layers of dense memory cells with a base logic layer to implement… Expand In this paper, a current-feedback instrumentation amplifier for bidirectional high-side current-sensing is proposed. The current… Expand This paper describes an instrumentation amplifier for bidirectional high-side current-sensing applications. It uses a multipath… Expand Accurate high-side current sensing is necessary in many applications, including motor control, solenoid control, and power… Expand The design of fast, low power and robust sense amplifier circuits is a challenge for nanoscale SRAMs due to the increasing bit… Expand A current-sense amplifier that fully compensates the bit line multiplexer based on an improved feedback structure is implemented… Expand A 4-Mb CMOS SRAM with 3.84 μm 2 TFT load cells is fabricated using 0.25-μm CMOS technology and achieves an address access time of… Expand A 7-ns 140-mW 1-Mb CMOS SRAM was developed to provide fast access and low power dissipation by using high-speed circuits for a 3… Expand The speed of VLSI chips is increasingly limited by signal delay in long interconnect lines. A simple analysis shows that major… Expand