Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 210,064,085 papers from all fields of science
Search
Sign In
Create Free Account
Black's equation
Known as:
Black equation
Black's Equation is a mathematical model for the mean time to failure (MTTF) of a semiconductor circuit due to electromigration: a phenomenon of…
Expand
Wikipedia
(opens in a new tab)
Create Alert
Alert
Related topics
Related topics
2 relations
Electromigration
Broader (1)
Electronic design automation
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Determination of safe reliability region over temperature and current density for through wafer vias
C. Whitman
,
Michael Meeder
,
P. Zampardi
Microelectronics and reliability
2017
Corpus ID: 32420293
2017
2017
Thermo-electric coupling reliability model of copper pillar bump based on Black equation
Bin Zhou
,
Z. Fu
,
Yun Huang
,
R. Yao
,
Jinyuan Zhang
International Conference on Electronic Packaging…
2017
Corpus ID: 31160556
In order to investigate the reliability of micro-interconnecting copper pillar bump under thermal-electric coupling, the test…
Expand
2016
2016
Voltage-based electromigration immortality check for general multi-branch interconnects
Zeyu Sun
,
E. Demircan
,
M. Shroff
,
Taeyoung Kim
,
Xin Huang
,
S. Tan
IEEE/ACM International Conference on Computer…
2016
Corpus ID: 3452630
As VLSI technology features are pushed to the limit with every generation and with the introduction of new materials and…
Expand
2011
2011
Analysis of critical-length data from Electromigration failure studies
V. Dwyer
Microelectronics and reliability
2011
Corpus ID: 27096642
2011
2011
Black's equation for today's ULSI interconnect Electromigration reliability — A revisit
Wei Li
,
C. Tan
IEEE International Conference of Electron Devices…
2011
Corpus ID: 20223701
Electromigration (EM) is an important failure mechanism in Ultra-Large-Scale Integration (ULSI) interconnections. The Black's…
Expand
Review
2010
Review
2010
Physically based models of electromigration: From Black's equation to modern TCAD models
R. Orio
,
H. Ceric
,
S. Selberherr
Microelectronics and reliability
2010
Corpus ID: 10800285
2008
2008
Effects of length scaling on electromigration in dual-damascene copper interconnects
M. Lin
,
M. T. Lin
,
Tahui Wang
Microelectronics and reliability
2008
Corpus ID: 15971355
2005
2005
Lead-Free and PbSn Bump Electromigration Testing
Stephen Gee
,
N. Kelkar
,
Joanne Huang
,
K. Tu
2005
Corpus ID: 18953850
As the electronics industry continues to push for miniaturization, several reliability factors become vital issues. The demand…
Expand
1999
1999
Temperature gradient effects in electromigration using an extended transition probability model and temperature gradient free tests. I. Transition probability model
K. Jonggook
,
V. Tyree
,
C. R. Crowell
IEEE International Integrated Reliability…
1999
Corpus ID: 60734252
Temperature gradient effects incorporated in electromigration are examined via the movement of vacancies. To explain the movement…
Expand
1979
1979
Job Change Behavior in the Rural Income Maintenance Experiment. Institute for Research on Poverty Discussion Papers.
Richard E. Miller
1979
Corpus ID: 16804508
kindly commented on an earlier draft. A considerable debt is owed to Professor Seymour Spi1erman for the· gUidance provided by a…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE