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11-(2-fluoroethyl)estradiol

Known as: 11-(2-fluoroethyl)estra-1,3,5(10)-triene-3,17-diol, FETS, fet 
National Institutes of Health

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Broader (1)

Estradiol
analogs & derivatives

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2013
Highly Cited
2013
Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter
The introduction of enhancement mode gallium nitride based power devices such as the eGaN®FET offers the potential to achieve… 
Highly Cited
2010
Highly Cited
2010
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are… 
Highly Cited
2005
Highly Cited
2005
Memory performance and retention of an all-organic ferroelectric-like memory transistor
We have built a nonvolatile memory field-effect transistor (FET)-based on organic compounds. The gate-insulating polymer features… 
Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional… 
1995
1995
Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)
A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected… 
Highly Cited
1993
Highly Cited
1993
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
The influence of the gate leakage current (GLC) on the noise performance of MESFETs (metal-semiconductor field effect transistors… 
Highly Cited
1988
Highly Cited
1988
Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator
The fabrication and performance of dummy-gate self-aligned germanium MOSFETs utilizing a native germanium oxynitride gate… 
Highly Cited
1987
Highly Cited
1987
Designing CMOS Circuits for Switch-Level Testability
Conventional testing techniques often fail to be effective for CMOS combinational circuits, since most of their switch-level… 
Highly Cited
1981
Highly Cited
1981
A functional GaAs FET noise model
It is the purpose of this paper to develop a theory upon which the design of low noise FET amplifiers can be based. This is not a… 
1981
1981
High-purity semi-insulating GaAs material for monolithic microwave integrated circuits
Liquid-Encapsulated Czochralski (LEC) growth of large-diameter bulk GaAs crystals from pyrolytic boron nitride (PBN) crucibles… 
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