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11-(2-fluoroethyl)estradiol
Known as:
11-(2-fluoroethyl)estra-1,3,5(10)-triene-3,17-diol
, FETS
, fet
National Institutes of Health
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Related topics
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2 relations
Broader (1)
Estradiol
analogs & derivatives
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2013
Highly Cited
2013
Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter
D. Reusch
,
J. Strydom
Applied Power Electronics Conference
2013
Corpus ID: 47558221
The introduction of enhancement mode gallium nitride based power devices such as the eGaN®FET offers the potential to achieve…
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Highly Cited
2010
Highly Cited
2010
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
H. Nilsson
,
P. Caroff
,
C. Thelander
,
E. Lind
,
Olov Karlström
,
L. Wernersson
2010
Corpus ID: 121338861
We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are…
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Highly Cited
2005
Highly Cited
2005
Memory performance and retention of an all-organic ferroelectric-like memory transistor
Raoul Schroeder
,
L. Majewski
,
Monika M. Voigt
,
M. Grell
IEEE Electron Device Letters
2005
Corpus ID: 34133905
We have built a nonvolatile memory field-effect transistor (FET)-based on organic compounds. The gate-insulating polymer features…
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Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
S. Koo
,
A. Fujiwara
,
Jinhua Han
,
E. Vogel
,
C. Richter
,
J. Bonevich
2004
Corpus ID: 55263936
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional…
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1995
1995
Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)
Kevin J. Chen
,
T. Akeyoshi
,
Koichi Maezawa
IEEE Electron Device Letters
1995
Corpus ID: 46007225
A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected…
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Highly Cited
1993
Highly Cited
1993
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
F. Danneville
,
G. Dambrine
,
H. Happy
,
A. Cappy
IEEE MTT-S International Microwave Symposium…
1993
Corpus ID: 21189403
The influence of the gate leakage current (GLC) on the noise performance of MESFETs (metal-semiconductor field effect transistors…
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Highly Cited
1988
Highly Cited
1988
Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator
James J. Rosenberg
,
Suzanne C. Martin
IEEE Electron Device Letters
1988
Corpus ID: 57746
The fabrication and performance of dummy-gate self-aligned germanium MOSFETs utilizing a native germanium oxynitride gate…
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Highly Cited
1987
Highly Cited
1987
Designing CMOS Circuits for Switch-Level Testability
Dick L. Liu
,
E. McCluskey
IEEE Design & Test of Computers
1987
Corpus ID: 16747660
Conventional testing techniques often fail to be effective for CMOS combinational circuits, since most of their switch-level…
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Highly Cited
1981
Highly Cited
1981
A functional GaAs FET noise model
A. Podell
IEEE Transactions on Electron Devices
1981
Corpus ID: 31469043
It is the purpose of this paper to develop a theory upon which the design of low noise FET amplifiers can be based. This is not a…
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1981
1981
High-purity semi-insulating GaAs material for monolithic microwave integrated circuits
H. M. Hobgood
,
G. Eldridge
,
D. L. Barrett
,
R.N. Thomas
IEEE Transactions on Electron Devices
1981
Corpus ID: 37404119
Liquid-Encapsulated Czochralski (LEC) growth of large-diameter bulk GaAs crystals from pyrolytic boron nitride (PBN) crucibles…
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