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Π pad

Known as: Π-pad, PI pad, Box attenuator 
The Π pad (pi pad) is a specific type of attenuator circuit in electronics whereby the topology of the circuit is formed in the shape of the Greek… 
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Related topics

Related topics

15 relations
AmplifierBalanced circuitDecibelDipole antenna

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Raspberry Pi Touchscreen Tablet (Pi-Pad)
The Raspberry Pi is a credit card sized single-board computer developed in UK by Raspberry Pi foundation with the intention of… 
2013
2013
Effects of the Use of an Aluminum Reflecting and an ${\rm SiO}_{2}$ Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface
A GaN-based light-emitting diode (LED) with an aluminum (Al) reflecting and an SiO2 insulating layers (RILs) deposited on the… 
2012
2012
GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating ${\rm SiO}_{2}$ Layer
The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO2 layer. It was found that… 
2011
2011
Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer
In this study, a GaN-based light-emitting diode (LED) with a distributed Bragg reflector (DBR) current blocking layer (CBL… 
2008
2008
Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED
2007
2007
Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes
We proposed a simple method to reduce the current crowding effect of nitride-based light emitting diodes (LEDs) without extra dry… 
2007
2007
Solder joint strengths and interfacial reactions in various Pb-free solder joints
Two kinds of Pb-free solders, Sn8Zn3Bi and Sn9ZnAl, were used to mount passive components onto OSP and ENIG PCB using a reflow… 
2004
2004
Optimal Signcryption from Any Trapdoor Permutation
We build several highly-practical and optimized signcryption constructions directly from trapdoor permutations, in the random… 
2004
2004
InGaN-GaN MQW LEDs with current blocking layer formed by selective activation
Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN… 
2004
2004
Improved light-output power of GaN LEDs by selective region activation
A novel selective high resistivity region (SHRR) is created under the p-pad metal electrode of a normal GaN light emitting diode… 
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