Hydrogen content of a variety of plasma‐deposited silicon nitrides
@article{Chow1982HydrogenCO,
title={Hydrogen content of a variety of plasma‐deposited silicon nitrides},
author={Raymond K. M. Chow and William A. Lanford and Wang Ke-Ming and Richard S. Rosler},
journal={Journal of Applied Physics},
year={1982},
volume={53},
pages={5630-5633},
url={https://api.semanticscholar.org/CorpusID:95333172}
}The hydrogen contents and etch rates have been measured for plasma‐deposited silicon nitrides made in nine different commercially available reactors as well as for some low pressure chemical vapor deposited nitrides. The hydrogen contents vary from 4% to 39% (atomic). A correlation is observed between etch rate and hydrogen content, with etch rates varying over three orders of magnitude.
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