Characteristics of silicon nitride deposited by plasma‐enhanced chemical vapor deposition using a dual frequency radio‐frequency source

@inproceedings{Pearce1992CharacteristicsOS,
  title={Characteristics of silicon nitride deposited by plasma‐enhanced chemical vapor deposition using a dual frequency radio‐frequency source},
  author={Charles Walter Pearce and R. F. Fetcho and M. D. Gross and R. F. Koefer and R. A. Pudliner},
  year={1992}
}
  • Charles Walter Pearce, R. F. Fetcho, +2 authors R. A. Pudliner
  • Published 1992
  • Chemistry
  • We have studied the effect of plasma excitation frequency on the properties of plasma‐enhanced chemical vapor deposition silicon nitride films. The use of two radio‐frequency sources, one at 270 kHz and the other at 13.56 MHz, enabled us to vary film properties such as stress by altering the amount of power supplied by each source. The low‐frequency excitation was seen to favor the formation of N—H bonds in the deposited film. The relative amounts of N—H and Si—H bonds in the film were found to… CONTINUE READING

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