Electron trapping in Al2O3/HfO2 nanolaminate-based MOS capacitors
@article{Salomone2012ElectronTI,
title={Electron trapping in Al2O3/HfO2 nanolaminate-based MOS capacitors},
author={Lucas Sambuco Salomone and Francesca Campabadal and M. I. Fernandez and Jos{\'e} Lipovetzky and Sebasti{\'a}n H. Carbonetto and Mariano Garcia Inza and Eduardo Gabriel Redin and Adri{\'a}n Faig{\'o}n},
journal={2012 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)},
year={2012},
pages={90-95},
url={https://api.semanticscholar.org/CorpusID:15082728}
}Constant capacitance voltage transient technique was used to study the trapping/detrapping processes in MOS capacitors with an Atomic Layer Deposited (ALD) stack and its use as a component of Charge-Trapping nonvolatile memory (CT-NVM).
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