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GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

Ge x Si1−x films are grown on Si by molecular beam epitaxy and analyzed by Nomarski optical interferencemicroscopy, Rutherford ion backscattering and channeling, x‐ray diffraction, and transmission…
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Critical-exponent measurements of a two-dimensional superconductor

Voltage-current (V-I) measurements of an amorphous indium/ p indium oxide thin-film composite have yielded values for the exponent eta(T) describing the power-law decay of the order-parameter…
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Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy

GexSi1−x layers are grown on Si substrates over the full range of alloy compositions at temperatures from 400–750 °C by means of molecular beam epitaxy. At a given growth temperature films grow in a…
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Theory of high-TC superconductivity: transition temperature

It is demonstrated that the transition temperature (TC) of high-TC superconductors is determined by their layered crystal structure, bond lengths, valency properties of the ions, and Coulomb coupling…
IOP Publishing (opens in a new tab)

50 nm Vertical Replacement-Gate (VRG) pMOSFETs

We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year, these devices show promise as a successor to planar MOSFETs for highly-scaled…
IEEE (opens in a new tab)

Novel MEMS Fabry-Perot Interferometric Pressure Sensors

A novel design for a Fabry-Perot Interferometric Sensor (FPIS) consisting of a Fabry-Perot cavity formed between two bonded surfaces is discussed. The Fabry-Perot cavity and the optical fiber to…
Scientific.net (opens in a new tab)

Light emission from silicon: Some perspectives and applications

Research on efficient light emission from silicon devices is moving toward leading-edge advances in components for nano-optoelectronics and related areas. A silicon laser is being eagerly sought and…
Springer Nature (opens in a new tab)

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

High-TC Superconductivity in Hydrogen Clathrates Mediated by Coulomb Interactions Between Hydrogen and Central-Atom Electrons

The uniquely characteristic macrostructures of binary hydrogen-clathrate compounds MHn formed at high pressure, a cage of hydrogens surrounding a central-atom host, is theoretically predicted in…
Springer Nature (opens in a new tab)

Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions

Over the last couple of years, manufacturers of rapid thermal annealing (RTA) equipment have been aggressively developing lamp-based furnaces capable of achieving ramp-up rates of the order of…
Springer Nature (opens in a new tab)
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