nickel silicide
National Institutes of Health
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Thermally activated axial intrusion of nickel silicides in silicon nanowires (SiNWs) is utilized to form nickel silicide/silicon…
An integrated device-fabric methodology for evaluating and validating nanoscale computing fabrics is presented. The methodology…
In this letter, indium (In) implantation is introduced as a method to tune the Schottky barrier height of nickel silicide (NiSi…
Specific structural changes in Sc/Si multilayer mirrors irradiated with extreme ultraviolet (EUV) laser single pulses (λ = 46.9…
The anomalous gate-edge leakage current in n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs), which is…
We report a new method of forming nickel silicide (NiSi) on n-Si with low contact resistance, which achieves a Schottky barrier…
The properties of nickel silicide formed by depositing nickel on Si/p/sup +/-Si/sub 1-x/Ge/sub x/ layer are compared with that of…