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gallium nitride

Known as: GaN compound, gallium nitride (GAN) 
National Institutes of Health

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Gallium

Papers overview

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2014
2014
A Novel SU8 Polymer Anchored Low Temperature HWCVD Nitride Polysilicon Piezoresitive Cantilever
In this paper, we present a novel approach for fabricating piezoresistive silicon nitride cantilevers using polymer as an anchor… 
2014
2014
High temperature stability of Eu~(2+)-activated nitride red phosphors
The novel nitride-based luminescent materials have received much attention since the end of the last century. In this paper, the… 
2013
2013
Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates.
We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible… 
2012
2012
High Power Density and High Temperature Converter Design for Transportation Applications
2008
2008
Carrier dynamics and erbium sensitization in silicon-rich nitride nanocrystals
Ultrafast two-color pump-probe measurements, time-resolved photoluminescence (TRPL), and photoluminescence excitation… 
2006
2006
Postirradiation examination of AFCI nitride and oxide transmutation fuels at 8 at.
1999
1999
Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)
High quality gallium nitride thin films have been grown on 6H-silicon carbide (0001) substrates at varying substrate temperatures… 
Review
1998
Review
1998
PLANARIZATION AND INTEGRATION OF SHALLOW TRENCH ISOLATION
STI process flow and planarization requirements are reviewed. An STI planarization mask was designed and utilized for test wafer… 
1995
1995
The effect of hydrogen-plasma and PECVD-nitride deposition on bulk and surface passivation in string-ribbon silicon solar cells
We have investigated whether an in-situ hydrogen or ammonia rf-plasma treatment prior to a PECVD-nitride deposition would promote… 
1993
1993
Field inversion generated in the CMOS double-metal process due to PETEOS and SOG interactions
Severe field inversion was observed in circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as…