gallium nitride

Known as: GaN compound, gallium nitride (GAN) 
 
National Institutes of Health

Papers overview

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Review
2017
Review
2017
The field of visible light communications (VLC) has gained significant interest over the last decade, in both fibre and free… (More)
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2016
2016
The spectrum of two-dimensional (2D) and layered materials 'beyond graphene' offers a remarkable platform to study new phenomena… (More)
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Highly Cited
2014
Highly Cited
2014
The emergence of gallium nitride (GaN) based power devices offers the potential to achieve higher efficiencies and higher… (More)
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Highly Cited
2013
Highly Cited
2013
PECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire… (More)
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Highly Cited
2012
Highly Cited
2012
The introduction of Gallium Nitride (GaN) based power devices offers the potential to achieve higher efficiency and higher… (More)
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Highly Cited
2012
Highly Cited
2012
Silicon Power MOSFETs, with more than thirty years of development, are widely accepted and applied in power converters. Gallium… (More)
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2011
2011
The promise of wide band-gap materials has the potential to usher in a new era of power electronics not seen since the… (More)
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Highly Cited
2002
Highly Cited
2002
There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong… (More)
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2002
2002
This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN… (More)
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Highly Cited
2001
Highly Cited
2001
The frequency dependence of PECVD nitride and LPCVD oxide metal-insulator-metal (MIM) capacitors is investigated with special… (More)
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