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fluid dram - US
Known as:
FLUID DRAM
, [fdr_us]
, Fluid Dram US
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A unit of volume equal to 1/8 fluid ounce, 0.225 586 cubic inch or 3.696 691 milliliters.
National Institutes of Health
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Papers overview
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2016
2016
Introducción al estudio de los manglares
J. Cuatrecasas
2016
Corpus ID: 89852956
Con el nombre de manglar se designan ci e.rtas asocia c1011 es ,·egeta les. ¿¡nfibias, leñosa s y p erennifolia s, ca n1derizadas…
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2012
2012
Variation Study and Implications for BJT-Based Thin-Body Capacitorless DRAM
M. H. Cho
,
T. Liu
IEEE Electron Device Letters
2012
Corpus ID: 2216145
Variability in back-gated thin-body capacitorless DRAM cell performance is investigated via TCAD simulation. Sources of…
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2009
2009
Fabrication and Properties of $\hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85} \hbox{Ti}_{3}\hbox{O}_{12}/\break\hbox{HfO}_{2}/\hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET
D. Xie
,
Yongyuan Zang
,
Yafeng Luo
,
T. Ren
,
Litian Liu
IEEE Electron Device Letters
2009
Corpus ID: 6143217
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 400-nm-thick Bi<sub>3.15</sub>Nd<sub>0.85</sub>Ti<sub>3</sub>O…
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2009
2009
Withdrawal of Fabrication and Properties of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si Structure for Ferroelectric DRAM (FEDRAM) FET
D. Xie
,
Yongyuan Zang
,
Yafeng Luo
,
T. Ren
,
Litian Liu
2009
Corpus ID: 113426392
2005
2005
Device design guidelines for FC-SGT DRAM cells with high soft-error immunity
F. Matsuoka
,
H. Sakuraba
,
F. Masuoka
IEEE Transactions on Electron Devices
2005
Corpus ID: 41050143
This paper describes the device design guidelines for floating channel type surrounding gate transistor (FC-SGT) DRAM cells with…
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Review
2001
Review
2001
Edmundo Murrugarra Public Transfers and Migrants ́ Remittances : Evidence from the Recent Armenian Experience
Edmundo Murrugarra
2001
Corpus ID: 15445749
This paper examines the link between remittances, public transfers, and health care utilization. First, the paper exploits…
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Review
1999
Review
1999
Plasma CVD of (BaSr)TiO3 Dielectrics for Gigabit DRAM Capacitors
M. Yoshida
,
H. Yabuta
,
+6 authors
Y. Kato
1999
Corpus ID: 55386410
Electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) of (BaSr)TiO3 dielectrics is reviewed. The oxygen…
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1998
1998
Source synchronization and timing Vernier techniques for 1.2 GB/s SLDRAM interface
Y. Nakase
,
Y. Morooka
,
+8 authors
M. Yamada
IEEE International Solid-State Circuits…
1998
Corpus ID: 19753928
SLDRAM architecture is a proposed standard for high bandwidth, high-speed packetized DRAM. Its I/O interface, SLDRAM interface…
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1989
1989
A 23ns 1Mbit BiCMOS DRAM
K. Yanagisawa
,
Goro Kitsukawa
,
+10 authors
Kiyoo Itoh
European Solid-State Circuits Conference
1989
Corpus ID: 46710995
I -_JLd Lioduction Bit density oi DRAMs has continued to be improved by a factor of four times every three years. In contrast…
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1936
1936
Osmotischer Druck, Elektrolyte und Gewebezellen
H. Grossfeld
Protoplasma
1936
Corpus ID: 46022532
W e n n es sieh, wie in den vorl iegenden Versuchen d~rum handel t , die unmit te lbare Wi rkung yon Stoffen auf die Gewebezelle…
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