Skip to search formSkip to main contentSkip to account menu

Video Processing Engine

Known as: VPE 
nVidia introduced the Video Processing Engine or VPE with the GeForce 4 MX. It is a feature of nVidia's GeForce graphics processor line that offers… 
Wikipedia (opens in a new tab)

Related topics

Related topics

12 relations
Application programming interfaceCODEC AccelerationDevice driverDirectX Video Acceleration

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Intervention Effects in Early Grammar: Evidence from Sluicing
Ellipsis (meaning without sound) poses an extreme ‘poverty of the stimulus’ (POS) problem for language acquisition. To arrive at… 
2015
2015
A Non-isomorphism Approach to Null-Argument Anaphora in Korean
The paper mainly focuses on NAA based on the contention that Korean doesn’t have ‘-ha’(do) VPE types corresponding to English VPE… 
2005
2005
First results on GaAs blocked impurity band (BIB) structures for far-infrared detector arrays
We are developing a GaAs photoconductive detector for far-infrared (FIR) astronomy. A detector based on GaAs in the blocked… 
2005
2005
Fusion of Odometry with Magnetic Sensors Using Kalman Filters and Augmented System Models for Mobile Robot Navigation
This paper presents a comparative study of two data fusion methods for high precision mobile robot's pose estimation. Odometric… 
1992
1992
High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source
Monolithic integration of an InGaAsP/InGaAs multiple quantum well (MQW) distributed-feedback (DFB) laser with a high-speed InGaAs… 
1981
1981
1.3 µm LPE- and VPE-grown InGaAsP edge-emitting LED́s
Comparably high performance has been obtained from both vapor-phase and liquid-phase epitaxy InGaAsP/InP 1.3 μm edge-emitting LED… 
Highly Cited
1980
Highly Cited
1980
Stability of performance and interfacial problems in GaAs MESFET's
Interface effects in GaAs MESFET's were investigated from the viewpoint of stability of performance. It was clarified, on the… 
1979
1979
Yellow—Green In1-xGaxP and In1-xGaxP1-zAszLED's and electron-beam-pumped lasers prepared by LPE and VPE
In<inf>1-x</inf>GA<inf>x</inf>P<inf>x</inf>(<tex>x</tex>= 0.6-0.7) and In<inf>1-x</inf>Ga<inf>x</inf>As<inf>z</inf>P<inf>1-z</inf… 
1977
1977
Silicon carbide field-effect and bipolar transistors
Schottky-barrier field-effect transistors and bipolar npn transistors have been produced from silicon carbide. P-n junctions were… 
1976
1976
Electron and hole traps in N-GaAs crystals
Deep traps were measured and their electronic and optical properties were determined by junction capacitance techniques in n-GaAs… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)