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VGS Mail

VGS Mail is an extension for Windows Mobile devices that allows IMAP push email. VGS Mail was invented by Dr. Geoffrey Cross, co-founder of Visual… Expand
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2017
2017
Estimating switching losses for SiC MOSFETs with non-flat miller plateau region
Power loss calculations are critical to a power converter design, helping with estimation of efficiency, switch selection and… Expand
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2012
2012
Measurement and characterization of hot carrier safe operating area (HCI-SOA) in 24V n-type lateral DMOS transistors
Due to strong demand on smart-power technologies, LDMOS device has been widely used because of its compatibility with standard… Expand
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2009
2009
Performance Analysis of 60-nm Gate-Length III–V InGaAs HEMTs: Simulations Versus Experiments
An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) for logic… Expand
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2006
2006
A 0.8V 1.52MHz MSVC Relaxation Oscillator with Inverted Mirror Feedback Reference for UHF RFID
A 0.8V nano-power relaxation oscillator for EPC standard UHF RFID transponder is presented. A low-voltage inverted mirror… Expand
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2006
2006
Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate–Source/Drain Underlap
Parasitic gate-source/drain (G-S/D) fringe capacitance in nonclassical nanoscale CMOS devices, e.g., double-gate (DG) MOSFETs, is… Expand
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2004
2004
Cálculo de la movilidad en dispositivos HEMT a partir de medidas de intermodulación
In this paper we present a new method to evaluate mobility in HEMT devices. This new approach is based in the measurement of the… Expand
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2003
2003
Impact of the Graded-Channel Architecture on Double Gate Transistors for High-Performance Analog Applications
This work introduces the use of Gate-All-Around SOI MOSFETs using the Graded-Channel (GC) architecture for analog circuits and… Expand
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1999
1999
A 1.9 V I/O buffer with gate-oxide protection and dynamic bus termination for 400 MHz UltraSparc microprocessor
Transistors fabricated with thin gate-oxides are vulnerable to dielectric damage and reliability problems due to excessive… Expand
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1997
1997
A new empirical large signal model for silicon RF LDMOS FETs
A new empirical large signal drain current source model, that is single-piece and continuously differentiable, has been developed… Expand
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1994
1994
Collapse and large signal modelling of GaAs field effect transistors at 77 K
A complete electrical characterization of different types of GaAs field effect transistors at liquid nitrogen temperature is… Expand
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