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Static random-access memory

Known as: RSNM, S-RAM, SRAM latency 
Static random-access memory (static RAM or SRAM) is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each… Expand
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Papers overview

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Highly Cited
2016
Highly Cited
2016
Neural networks are both computationally intensive and memory intensive, making them difficult to deploy on embedded systems with… Expand
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Highly Cited
2013
Highly Cited
2013
We present experimental evidence of single-event upsets in 28 and 45 nm CMOS SRAMs produced by single energetic electrons. Upsets… Expand
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Highly Cited
2011
Highly Cited
2011
A sheet-type Braille display operating at 4 V has been successfully fabricated by integrating organic an static random-access… Expand
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Highly Cited
2005
Highly Cited
2005
Today9s electronic gadgets, such as digital cameras and mp3 players, often contain three different types of memory, because none… Expand
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Highly Cited
2003
Highly Cited
2003
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just… Expand
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Highly Cited
2002
Highly Cited
2002
This paper examines the effect of technology scaling and microarchitectural trends on the rate of soft errors in CMOS memory and… Expand
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Highly Cited
1990
Highly Cited
1990
Testing static random access memories (SRAMs) for all possible failures is not feasible and one must restrict the class of faults… Expand
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Highly Cited
1988
Highly Cited
1988
A fault model for SRAMs (static random-access memories) is presented based on physical spot defects, which are modeled as local… Expand
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1988
1988
A self-test machine for static random access memories (SRAMs) has been developed. It is capable of running linear test algorithms… Expand
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Highly Cited
1987
Highly Cited
1987
The stability of both resistor-load (R-load) and full-CMOS SRAM cells is investigated analytically as well as by simulation… Expand
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