Skip to search formSkip to main content
You are currently offline. Some features of the site may not work correctly.

Static random-access memory

Known as: RSNM, S-RAM, SRAM latency 
Static random-access memory (static RAM or SRAM) is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each… Expand
Wikipedia

Related topics

Related topics

49 relations
6264AdrenoAnother WorldApollo VP3
Expand

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2016
Highly Cited
2016
Deep Compression: Compressing Deep Neural Network with Pruning, Trained Quantization and Huffman Coding
Neural networks are both computationally intensive and memory intensive, making them difficult to deploy on embedded systems with… Expand
  • figure 1
  • table 6
  • figure 9
  • figure 1
  • table 2
Is this relevant?
Highly Cited
2013
Highly Cited
2013
Electron-Induced Single-Event Upsets in Static Random Access Memory
We present experimental evidence of single-event upsets in 28 and 45 nm CMOS SRAMs produced by single energetic electrons. Upsets… Expand
  • figure 1
  • figure 2
  • figure 4
  • figure 3
  • figure 5
Is this relevant?
Highly Cited
2011
Highly Cited
2011
A 4 V Operation, Flexible Braille Display Using Organic Transistors, Carbon Nanotube Actuators, and Organic Static Random‐Access Memory
A sheet-type Braille display operating at 4 V has been successfully fabricated by integrating organic an static random-access… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
Is this relevant?
Highly Cited
2005
Highly Cited
2005
Toward a Universal Memory
Today9s electronic gadgets, such as digital cameras and mp3 players, often contain three different types of memory, because none… Expand
Is this relevant?
Highly Cited
2003
Highly Cited
2003
Magnetically engineered spintronic sensors and memory
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just… Expand
Is this relevant?
Highly Cited
2002
Highly Cited
2002
Modeling the effect of technology trends on the soft error rate of combinational logic
This paper examines the effect of technology scaling and microarchitectural trends on the rate of soft errors in CMOS memory and… Expand
  • figure 2
  • figure 3
  • figure 4
  • figure 5
  • figure 6
Is this relevant?
Highly Cited
1990
Highly Cited
1990
A realistic fault model and test algorithms for static random access memories
Testing static random access memories (SRAMs) for all possible failures is not feasible and one must restrict the class of faults… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
Is this relevant?
Highly Cited
1988
Highly Cited
1988
Fault modeling and test algorithm development for static random access memories
A fault model for SRAMs (static random-access memories) is presented based on physical spot defects, which are modeled as local… Expand
Is this relevant?
1988
1988
A realistic self-test machine for static random access memories
A self-test machine for static random access memories (SRAMs) has been developed. It is capable of running linear test algorithms… Expand
Is this relevant?
Highly Cited
1987
Highly Cited
1987
Static-noise margin analysis of MOS SRAM cells
The stability of both resistor-load (R-load) and full-CMOS SRAM cells is investigated analytically as well as by simulation… Expand
  • figure 2
  • figure 3
  • figure 5
  • figure 4
  • figure 7
Is this relevant?
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy, Terms of Service, and Dataset License
ACCEPT & CONTINUE