Skip to search formSkip to main contentSkip to account menu

Static random-access memory

Known as: RSNM, S-RAM, SRAM latency 
Static random-access memory (static RAM or SRAM) is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each… 
Wikipedia (opens in a new tab)

Related topics

Related topics

49 relations
6264AdrenoAnother WorldApollo VP3

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2017
Highly Cited
2017
X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories
Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art… 
Highly Cited
2016
Highly Cited
2016
EIE: Efficient Inference Engine on Compressed Deep Neural Network
State-of-the-art deep neural networks (DNNs) have hundreds of millions of connections and are both computationally and memory… 
Highly Cited
2015
Highly Cited
2015
Deep Compression: Compressing Deep Neural Network with Pruning, Trained Quantization and Huffman Coding
Neural networks are both computationally intensive and memory intensive, making them difficult to deploy on embedded systems with… 
Highly Cited
2012
Highly Cited
2012
NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory
Various new nonvolatile memory (NVM) technologies have emerged recently. Among all the investigated new NVM candidate… 
Highly Cited
2005
Highly Cited
2005
Toward a Universal Memory
Today9s electronic gadgets, such as digital cameras and mp3 players, often contain three different types of memory, because none… 
Highly Cited
2003
Highly Cited
2003
Magnetically engineered spintronic sensors and memory
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just… 
Highly Cited
2002
Highly Cited
2002
Modeling the effect of technology trends on the soft error rate of combinational logic
This paper examines the effect of technology scaling and microarchitectural trends on the rate of soft errors in CMOS memory and… 
Highly Cited
1988
Highly Cited
1988
Fault modeling and test algorithm development for static random access memories
A fault model for SRAMs (static random-access memories) is presented based on physical spot defects, which are modeled as local… 
1988
1988
A realistic self-test machine for static random access memories
A self-test machine for static random access memories (SRAMs) has been developed. It is capable of running linear test algorithms… 
Highly Cited
1987
Highly Cited
1987
Static-noise margin analysis of MOS SRAM cells
The stability of both resistor-load (R-load) and full-CMOS SRAM cells is investigated analytically as well as by simulation… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)