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Static random-access memory
Known as:
RSNM
, S-RAM
, SRAM latency
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Static random-access memory (static RAM or SRAM) is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each…
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Papers overview
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Highly Cited
2017
Highly Cited
2017
X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories
Amogh Agrawal
,
A. Jaiswal
,
Chankyu Lee
,
K. Roy
IEEE Transactions on Circuits and Systems Part 1…
2017
Corpus ID: 24970049
Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art…
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Highly Cited
2016
Highly Cited
2016
EIE: Efficient Inference Engine on Compressed Deep Neural Network
Song Han
,
Xingyu Liu
,
+4 authors
W. Dally
International Symposium on Computer Architecture
2016
Corpus ID: 1663491
State-of-the-art deep neural networks (DNNs) have hundreds of millions of connections and are both computationally and memory…
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Highly Cited
2015
Highly Cited
2015
Deep Compression: Compressing Deep Neural Network with Pruning, Trained Quantization and Huffman Coding
Song Han
,
Huizi Mao
,
W. Dally
International Conference on Learning…
2015
Corpus ID: 2134321
Neural networks are both computationally intensive and memory intensive, making them difficult to deploy on embedded systems with…
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Highly Cited
2012
Highly Cited
2012
NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory
Xiangyu Dong
,
Cong Xu
,
Yuan Xie
,
N. Jouppi
IEEE Transactions on Computer-Aided Design of…
2012
Corpus ID: 1096997
Various new nonvolatile memory (NVM) technologies have emerged recently. Among all the investigated new NVM candidate…
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Highly Cited
2005
Highly Cited
2005
Toward a Universal Memory
J. Åkerman
Science
2005
Corpus ID: 60577959
Today9s electronic gadgets, such as digital cameras and mp3 players, often contain three different types of memory, because none…
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Highly Cited
2003
Highly Cited
2003
Magnetically engineered spintronic sensors and memory
S. Parkin
,
Xin Jiang
,
C. Kaiser
,
A. Panchula
,
K. Roche
,
M. Samant
Proceedings of the IEEE
2003
Corpus ID: 61238789
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just…
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Highly Cited
2002
Highly Cited
2002
Modeling the effect of technology trends on the soft error rate of combinational logic
P. Shivakumar
,
M. Kistler
,
S. Keckler
,
D. Burger
,
L. Alvisi
Proceedings : International Conference on…
2002
Corpus ID: 6604570
This paper examines the effect of technology scaling and microarchitectural trends on the rate of soft errors in CMOS memory and…
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Highly Cited
1988
Highly Cited
1988
Fault modeling and test algorithm development for static random access memories
F. Beenker
,
R. Dekker
,
L. Thijssen
International Test Conference Proceeding@m_New…
1988
Corpus ID: 30094743
A fault model for SRAMs (static random-access memories) is presented based on physical spot defects, which are modeled as local…
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1988
1988
A realistic self-test machine for static random access memories
F. Beenker
,
R. Dekker
,
L. Thijssen
International Test Conference Proceeding@m_New…
1988
Corpus ID: 588981
A self-test machine for static random access memories (SRAMs) has been developed. It is capable of running linear test algorithms…
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Highly Cited
1987
Highly Cited
1987
Static-noise margin analysis of MOS SRAM cells
E. Seevinck
,
F. List
,
J. Lohstroh
1987
Corpus ID: 16284428
The stability of both resistor-load (R-load) and full-CMOS SRAM cells is investigated analytically as well as by simulation…
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