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Highly Cited
2008
Highly Cited
2008
Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?
A. Sachid
,
R. Francis
,
+4 authors
V. Rao
IEEE International Electron Devices Meeting
2008
Corpus ID: 44946479
Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (TFIN) necessary to maintain acceptable short…
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Highly Cited
2006
Highly Cited
2006
P-59 CHEMICAL CONSTITUENTS OF LIGULARIA VIRGAUREA AND ITS DIVERSITY IN SOUTHWESTERN SICHUAN OF CHINA
M. Tori
,
K. Honda
,
+7 authors
R. Hanai
2006
Corpus ID: 82151703
Highly Cited
2005
Highly Cited
2005
Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
D. Granados
,
Jorge M. García
,
T. Ben
,
S. Molina
2005
Corpus ID: 38099835
Stacked layers of self-assembled In(Ga)As quantum rings on GaAs grown by solid source molecular beam epitaxy are studied by ex…
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Highly Cited
2002
Highly Cited
2002
Dramatically Enhanced Fluorescence of Heteroaromatic Chromophores upon Insertion as Spacers into Oligo(triacetylene)s
M. Edelmann
,
J. Raimundo
,
+4 authors
M. Gross
2002
Corpus ID: 98211740
In continuation of a previous study on the modulation of π-electron conjugation of oligo(triacetylene)s by insertion of central…
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Highly Cited
1992
Highly Cited
1992
73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
E. Crabbé
,
J. Comfort
,
+5 authors
J. Stork
IEEE Electron Device Letters
1992
Corpus ID: 29848644
The authors report a thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction…
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Highly Cited
1991
Highly Cited
1991
The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
E. Prinz
,
P. Garone
,
P. Schwartz
,
X. Xiao
,
J. Sturm
IEEE Electron Device Letters
1991
Corpus ID: 31376118
The effects of base dopant outdiffusion and nominally undoped Si/sub 1-x/Ge/sub x/ spacer layers at the junction interfaces of Si…
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Highly Cited
1990
Highly Cited
1990
Reluctance motor with strong rotor anisotropy
D. Platt
Conference Record of the IEEE Industry…
1990
Corpus ID: 940585
A new rotor design is presented for the synchronous reluctance motor. It has something in common with the segmented and axially…
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Highly Cited
1987
Highly Cited
1987
Effect of exothermicity on electron transfer rates in photosynthetic molecular models
A. Joran
,
B. A. Leland
,
P. Felker
,
A. Zewail
,
J. Hopfield
,
P. Dervan
Nature
1987
Corpus ID: 4364023
To appreciate fully the significance of the high-resolution crystal structure of the reaction-centre complex from the purple…
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1985
1985
Synthesis and structure of liquid-crystalline side-chain polymers
V. P. Shibaev
,
N. Platé
1985
Corpus ID: 55872472
Abstract
Highly Cited
1982
Highly Cited
1982
Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology
P. J. Tsang
,
S. Ogura
,
W. Walker
,
J. Shepard
,
D. Critchlow
IEEE Transactions on Electron Devices
1982
Corpus ID: 27860057
A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2sidewall…
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