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SotB protein, Erwinia chrysanthemi

 
National Institutes of Health

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2014
2014
The reported compact SOI-MOSFET model hiroshima university starc igfet model-silicon on thin buried oxide (HiSIM-SOTB) has been… Expand
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2014
2014
【はじめに】MOSFET の微細化低電圧化が進むにつ れ,ランダムばらつきが深刻な課題として挙がって いる.Bulk MOSFETにおけるランダムばらつきの主 原因は,離散不純物揺らぎ(RDF)である.RDF… Expand
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2014
2014
【はじめに】MOSFET のさらなる微細化や低電圧化を実現する上で,ランダムばらつきは深刻な課題で ある.RTN は時間依存を有するドレイン電流ばらつきであり,その振幅は正規分布からはずれる[1,2]. また,従来の Bulk FET… Expand
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2012
2012
The SOI-MOSFET has three surfaces, for which electrostatic potential values are very much dependent on applied bias conditions… Expand
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2012
2012
............................................................................................................. i Acknowledgments… Expand
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