Skip to search formSkip to main contentSkip to account menu

Silvaco Data Systems v. Intel Corp.

Silvaco Data Systems v. Intel Corp was a trade secrets case heard before the California Court of Appeal for the Sixth District. Silvaco sued Intel… 
Wikipedia (opens in a new tab)

Related topics

Related topics

2 relations
Electronic design automationObject code

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Quantum Numerical Simulation of a HEMT Performance
This work simulated the structure of HEMT (transistors of high electronic movements) with and without the field plate. We analyze… 
2016
2016
A low-offset vertical Hall device with a couple of three-contact vertical Hall elements
Because of the electrical asymmetry, the traditional five-contact vertical Hall devices have large inherent offset. This paper… 
2015
2015
Modeling and simulation of InAsP/GaAs quantum well solar cell
One of the limiting factors of solar cell efficiency is the inability of the latter to absorb photons with low energy than the… 
2015
2015
Analysis and Simulation on an ISFET with Back-Gated Structure and High-Mobility Channel Material
A back-gated structure for ion-sensitive field-effect transistor (ISFET) has been proposed. The characteristics of the device… 
Review
2013
Review
2013
Numerical simulation and experimental facts about bottom-cell optimization for III-V on Silicon multijunction solar cells
This work reviews both theoretically - using numerical simulations with Silvaco TCAD- and experimentally several key features for… 
2013
2013
Designing of double gate HEMT in TCAD for THz applications
The terrific carrier transport properties of III-V compound semiconductors have attraction for THz applications due to… 
2012
2012
A novel analytical model for small signal parameter for Separate Gate InAlAs/InGaAs DG-HEMT
This paper presents a 3-port Small Signal Equivalent circuit (SSEC) for Separate Gate InAlAs/InGaAs/InP DG-HEMT. The various… 
2012
2012
Analysis &Characterization of Strained Silicon p-MOS having Si 3 N 4 cap layer
A comparison of performance and reliability between conventional, previously made Strained Pmos and an improved strained Pmos is… 
2012
2012
I-V Characteristic at Different Depletion Region for CMOS PN Photodiode for Optical Communication Applications
In this paper, CMOS PN photodiode will be design and analyze for the application at 5GHz optical communication. The paper will… 
2012
2012
Numerical study of GaAs-based dual junction intermediate band solar cells
A novel combination of quantum dot intermediate band solar cell and dual-junction tandem cell is proposed and studied numerically… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)