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Sequential access memory

Known as: Sam, Sequential-Access Memory 
In computing, sequential access memory (SAM) is a class of data storage devices that read stored data in a sequence. This is in contrast to random… 
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Related topics

Related topics

7 relations
CD-ROMComputer memoryDrum memoryLocality of reference

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
Method and apparatus for managing data in a sequential access memory device
提供了一种计算机程序产品、系统和方法，用于使用写入请求的属性确定在具有多个高速缓存的存储系统中的何处高速缓存数据，所述多个高速缓存包括顺序存取存储设备中的非易失性存储设备高速缓存。 响应于确定要高速缓存已修改轨道，所接收的已修改轨道被高速缓存在与顺序存取存储设备集成的非易失性存储设备中。 接收具有已修改轨道的写入请求。 做出关于所接收的写入请求的属性是否满足条件的确定。 响应于确定所述属性不满足所述条件，用于写入请求的所接收的已修改轨道被高速缓存在非易失性存储设备中。 降级请求被添加到具有所述属性不满足条件的所接收的写入请求的请求队列。 
2012
2012
A Delayed Buffered Technique Using The Concept Of Gated Driven Tree For Optimizing The Power
This Project presents circuit design of a low-power delay buffer. In order to store a data in a memory, the buffers in the memory… 
Review
2007
Review
2007
Fault Recovery for DistributedShared Memory
ion between the user's application and the message passing primitives available on the target systems. Distributed shared memory… 
2006
2006
Computing Substrates and Life
Alive matter distinguishes itself from inanimate matter by actively maintaining a high degree of inhomogenous organisation… 
2000
2000
Initialization of the computer system through a boot code which is stored in the sequential access memory
(57) Abstract: The computer system includes a processor and a sequential access memory the boot program is stored. The boot… 
1977
1977
The Schottky I/sup 2/L technology and its application in a 24x9 sequential access memory
The Schottky I/SUP 2/L device and a two-level metal scheme have been used to fabricate a 24/spl times/9 sequential access memory… 
1977
1977
A metallisation providing two levels of interconnect for beam-leaded silicon integrated circuits
A two-level-metal structure is described for beam-leaded silicon integrated circuits. The two-level structure consists of a Ti-Pt… 
1976
1976
The Schottky I2L technology and its application in a 24×9 sequential access memory
The Schottky I<sup>2</sup>L device and a two level metal scheme have been used to fabricate a 24×9 sequential access memory. The… 
1976
1976
A metallization providing two levels of interconnect for beam leaded silicon integrated circuits
A two level metal structure is described for beam leaded silicon integrated circuits. The two level structure consists of a Ti-Pt… 
1958
1958
A special-purpose solid-state computer using sequential access memory
Synopsis: A feasibility model of a new, special purpose computer using dioderesistor logic and high-speed pulse amplifiers has… 
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