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Scanning Auger Spectrometer (device)

Known as: AES, Auger Electron Spectrometer, Scanning Auger Spectrometer 
An instrument that consist of an ultra high vacuum scanning microscope column combined with an electron energy analyzer, which can determine the… 
National Institutes of Health

Papers overview

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Highly Cited
2006
Highly Cited
2006
Experimental and theoretical investigation of the stability of Pt-3d-Pt(111) bimetallic surfaces under oxygen environment.
The stability of the Pt-3d-Pt(111) (3d = Ti, V, Cr, Mn, Fe, Co, or Ni) bimetallic surface structures in the presence of adsorbed… 
Highly Cited
2003
Highly Cited
2003
Direct determination of metals in organics by inductively coupled plasma atomic emission spectrometry in aqueous matrices.
Highly Cited
2001
Highly Cited
2001
A Specification for Rijndael, the AES Algorithm
1.1 Rijndael Inputs and Outputs The input, the output and the cipher key for Rijndael are each bit sequences containing 128, 192… 
Highly Cited
1998
Highly Cited
1998
MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer
Highly Cited
1993
Highly Cited
1993
Near-threshold ion-induced defect production in graphite.
Subplantation of the noble-gas ions He + , Ne + , Ar + , and Kr + into graphite in the energy range of 10-150 eV with doses in… 
Highly Cited
1990
Highly Cited
1990
Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applications
Copper films for potential use in multilevel metallization in ULSIC’s were produced by low temperature (250–350° C) metal-organic… 
Review
1988
Review
1988
Surface geometry determination by large-angle ion scattering
Highly Cited
1987
Highly Cited
1987
Electrical and physical characteristics of thin nitrided oxides prepared by rapid thermal nitridation
Ultrathin oxides (5-12 nm) were nitrided by lamp-heated rapid thermal annealing in ammonia at temperatures of 900-1150°C for 5… 
Highly Cited
1987
Highly Cited
1987
The enhancement of CO hydrogenation on rhodium by TiOx overlayers
1978
1978
Ohmic contacts for GaAs devices using epitaxial Ge films
Ohmic contacts to n-type GaAs have been developed using epitaxial Ge films on GaAs alloyed with Ni overlayers by solid state… 
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