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SLC14A1 gene

Known as: UREA TRANSPORTER, ERYTHROCYTE, UTB, SOLUTE CARRIER FAMILY 14 (UREA TRANSPORTER), MEMBER 1 
National Institutes of Health

Related topics

Related topics

1 relation
Kidd Blood-Group System

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III–V Semiconductor) on Variation for Logic and SRAM Applications
The need to enhance transistor performance below 22-nm node has brought in a change in transistor architecture from planar bulk… 
2013
2013
Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach
Using a novel Voronoi method that can provide a more realistic representation of metal-gate granularity, we investigate and… 
2012
2012
Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG
Statistical variability (SV) critically affects the scaling, performance, leakage power, and reliability of devices, circuits… 
2011
2011
Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs
This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and… 
2010
2010
Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects
In this paper, we investigate the performance potentials of silicon nanowire (SNW) and semiconducting graphene nanoribbon (GNR… 
Highly Cited
2009
Highly Cited
2009
Analog/RF Performance of Multichannel SOI MOSFET
In this paper, for the first time, we present a detailed RF experimental and simulation study of a 3-D multichannel SOI MOSFET… 
2008
2008
Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation
The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's… 
Highly Cited
2006
Highly Cited
2006
Impact of Random Dopant Fluctuation on Bulk CMOS 6-T SRAM Scaling
Based on the statistical 3D device simulation of well scaled 25, 18 and 13nm physical gate length bulk MOSFETs, the impact of… 
Highly Cited
2004
Highly Cited
2004
Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs
Damage-free sputter deposition and highly selective dry-etch processes have been developed for molybdenum (Mo) metal gate… 
1989
1989
Transfer excitation processes in ion-atom collisions at high energies.
A theory of ion-atom and ion-molecular collisions at high energies is formulated in which the projectile ions undergo… 
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