Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 225,400,087 papers from all fields of science
Search
Sign In
Create Free Account
REG3A wt Allele
Known as:
HIP
, PBCGF
, REG-III
Expand
Human REG3A wild-type allele is located in the vicinity of 2p12 and is approximately 3 kb in length. This allele, which encodes regenerating islet…
Expand
National Institutes of Health
Create Alert
Alert
Related topics
Related topics
8 relations
2p12
Antibacterial Response
Cell Proliferation Regulatory Process
Cell-Cell Adhesion Process
Expand
Broader (1)
REG3A gene
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Current–voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cells
N. Shigekawa
,
Jianbo Liang
,
Ryusuke Onitsuka
,
T. Agui
,
H. Juso
,
T. Takamoto
2015
Corpus ID: 102342988
We measured the current–voltage (I–V) and spectral-response characteristics of InGaP/GaAs/Si hybrid triple-junction cells that…
Expand
2010
2010
Enhancement of Optical Gain in Floating-Base InGaP–GaAs Heterojunction Phototransistors
Min-Su Park
,
Jae‐Hyung Jang
IEEE Photonics Technology Letters
2010
Corpus ID: 43248746
Comparative studies on the performances of floating-base InGaP-GaAs heterojunction bipolar phototransistors (HPTs) with and…
Expand
2007
2007
Effect of Gate Sinking on the Device Performance of the InGaP/AlGaAs/InGaAs Enhancement-Mode PHEMT
L. Chu
,
E. Chang
,
+6 authors
C. Chang
IEEE Electron Device Letters
2007
Corpus ID: 106678
An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky…
Expand
2006
2006
High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor
J. Tsai
,
S. Chiu
,
W. Lour
,
D. Guo
International Workshop on Junction Technology
2006
Corpus ID: 21363999
In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band…
Expand
Highly Cited
2004
Highly Cited
2004
Ku-band InGaP-GaAs HBT MMIC VCOs with balanced and differential topologies
Donghyun Baek
,
Sangsoo Ko
,
Jeong‐Geun Kim
,
Dong-Wook Kim
,
Songcheol Hong
IEEE transactions on microwave theory and…
2004
Corpus ID: 55276893
Balanced and differential voltage controlled oscillators (VCOs) are investigated with analytic noise models. Fully integrated…
Expand
2003
2003
Schizosaccharomyces pombe Cells Lacking the Ran-binding Protein Hba1 Show a Multidrug Resistance Phenotype Due to Constitutive Nuclear Accumulation of Pap1*
Esther A. Castillo
,
A. Vivancos
,
N. Jones
,
J. Ayté
,
E. Hidalgo
Journal of Biological Chemistry
2003
Corpus ID: 20207775
In Schizosaccharomyces pombe, the transcription factor Pap1, and the mitogen-activated protein kinase Sty1 are excluded from the…
Expand
2000
2000
Possible relationship between changes in islet neogenesis and islet neogenesis-associated protein-positive cell mass induced by sucrose administration to normal hamsters.
H. D. Zotto
,
L. Massa
,
+5 authors
Gagliardino Jj
Journal of Endocrinology
2000
Corpus ID: 8363805
The possible relationship between changes in islet cell mass and in islet neogenesis-associated protein (INGAP)-cell mass induced…
Expand
Highly Cited
1999
Highly Cited
1999
An HBT noise model valid up to transit frequency
M. Rudolph
,
R. Doerner
,
L. Klapproth
,
P. Heymann
IEEE Electron Device Letters
1999
Corpus ID: 44589208
A comprehensive HBT noise model for circuit simulation is presented that describes the microwave noise behavior up to the transit…
Expand
1996
1996
High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base
D. A. Ahmari
,
M. Fresina
,
+4 authors
G. Stillman
IEEE Electron Device Letters
1996
Corpus ID: 21792207
A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In/sub x/Ga/sub 1-x/As base has been…
Expand
1995
1995
High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
M. Fresina
,
D. A. Ahmari
,
P. Mares
,
Q. Hartmann
,
M. Feng
,
G. Stillman
IEEE Electron Device Letters
1995
Corpus ID: 42193435
We have demonstrated self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT's) with excellent dc, microwave, and noise…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE