Power-added efficiency

Known as: PAE, Power Added Efficiency

Power-added efficiency (PAE) is a metric for rating the efficiency of a power amplifier that takes into account the effect of the gain of the…

Papers overview

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2010

This paper gives analytical expressions for the class disruptive effect (DE) amplifier with nonlinear shunt capacitances at any…

2010

A new wideband open-loop active harmonic load–pull measurement approach is presented. The proposed method is based on wideband…

2009

The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the…

2008

This paper presents a 50 W current mode class D (CMCD) power amplifier (PA) operating at 2.14 GHz. The PA is implemented using…

2003

In this article, the equivalent circuit and modeling method for a defected ground structure (DGS) is proposed, to be used in the…

1998

This paper describes the low-noise and power performance of InGaP/InGaAs PHEMTs lattice-matched to GaAs substrates. The 0.15-/spl…

1997

4H-SiC MESFET's on conducting substrates were fabricated and characterized for large-signal performance over a wide range of gate…

1996

In this paper we report the development of two V-band MMIC power amplifiers, based on 0.1 mm pseudomorphic HEMT (PHEMT…

1993

A two-stage 6-18-GHz high-efficiency AlGaAs-GaAs HBT MMIC power amplifier has been designed and tested. At 7-V collector bias…

Highly Cited

1989

Highly Cited

1989

0.15- mu m-gate-length double-heterojunction pseudomorphic high electron mobility transistors (HEMTs) for which excellent…