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Polyfuse (PROM)
Known as:
Polysilicon fuse
A Polyfuse is a one-time-programmable memory component used in semiconductor circuits for storing unique data like chip identification numbers or…
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Related topics
Related topics
6 relations
Broader (2)
Computer memory
Non-volatile memory
Data (computing)
Programmable Array Logic
Programmable read-only memory
Semiconductor
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2007
2007
NiSi Polysilicon Fuse Reliability in 65-nm Logic CMOS Technology
Boon Ang
,
S. Tumakha
,
J. Im
,
S. Paak
IEEE transactions on device and materials…
2007
Corpus ID: 46259060
The programming characteristics and reliability of NiSi polysilicon fuse fabricated using 65-nm logic complimentary metal-oxide…
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2007
2007
A Detailed Qualitative Model for the Programming Physics of Silicided Polysilicon Fuses
T. Doorn
IEEE Transactions on Electron Devices
2007
Corpus ID: 31455013
This paper presents a detailed qualitative model for the programming physics of 90-nm silicided polysilicon fuses that is derived…
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2006
2006
Blowing Polysilicon Fuses: What Conditions are Best?
Yuanjing Li
,
A. Tang
IEEE International Integrated Reliability…
2006
Corpus ID: 35519854
A study has been conducted to understand polysilicon fuse blow mechanisms and determine optimized blow conditions. The…
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2003
2003
An on-chip self-repair calculation and fusing methodology
D. Anand
,
Bruce Cowan
,
+4 authors
D. L. Wheater
IEEE Design & Test of Computers
2003
Corpus ID: 30655260
Laser fusing is a standard technique for improving yield with memory reconfiguration and repair, but implementing fusing in…
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2001
2001
Bit line coupling scheme and electrical fuse circuit for reliable operation of high density DRAM
K. Lim
,
S. Kang
,
+5 authors
Byungil Ryu
Symposium on VLSI Circuits. Digest of Technical…
2001
Corpus ID: 41142755
Two design techniques are presented to improve the yield of high density DRAM product. One is bit line coupling (BLC) scheme and…
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1986
1986
A new fusible-type programmable element composed of Aluminum and polysilicon
Y. Fukuda
,
S. Kohda
,
K. Masuda
,
Y. Kitano
IEEE Transactions on Electron Devices
1986
Corpus ID: 23607864
This paper describes the structure and programming characteristics of newly developed fusible-type programmable element called an…
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1983
1983
A 16K CMOS PROM with polysilicon fusible links
L.R. Metzger
IEEE Journal of Solid-State Circuits
1983
Corpus ID: 42941301
A 16K synchronous CMOS PROM with polysilicon fusible links and a 2K-word by 8-bit organization is described. The memory cell…
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1982
1982
An 80 ns 32K EEPROM using the FETMOS cell
Clinton Kuo
,
J. Yeargain
,
+4 authors
Alan R. Bormann
IEEE Journal of Solid-State Circuits
1982
Corpus ID: 28435036
A 32K bit EEPROM using the FETMOS (floating-gate electron tunneling MOS) cell has achieved a typical access time of 80 ns and a…
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1981
1981
Programming mechanism of polysilicon fuse links
D. Greve
International Electron Devices Meeting
1981
Corpus ID: 28438420
We have studied the programming mechanism of polysilicon fuse links using both electrical measurements and microstructure studies…
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1976
1976
Reliability Evaluation of Programmable Read-Only Memories (PROMs).
T. M. Donnelly
,
W. W. Powell
,
C. DeWitt
,
D. R. Jerand
,
M. Penberg
1976
Corpus ID: 60014043
Abstract : The primary objectives of this study were to: (1) assess unique factors affecting the reliability of 1024-bit open…
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