Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 228,355,671 papers from all fields of science
Search
Sign In
Create Free Account
Polyfuse (PROM)
Known as:
Polysilicon fuse
A Polyfuse is a one-time-programmable memory component used in semiconductor circuits for storing unique data like chip identification numbers or…
Expand
Wikipedia
(opens in a new tab)
Create Alert
Alert
Related topics
Related topics
6 relations
Broader (2)
Computer memory
Non-volatile memory
Data (computing)
Programmable Array Logic
Programmable read-only memory
Semiconductor
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2007
2007
NiSi Polysilicon Fuse Reliability in 65-nm Logic CMOS Technology
Boon Ang
,
S. Tumakha
,
J. Im
,
S. Paak
IEEE transactions on device and materials…
2007
Corpus ID: 46259060
The programming characteristics and reliability of NiSi polysilicon fuse fabricated using 65-nm logic complimentary metal-oxide…
Expand
2007
2007
A Detailed Qualitative Model for the Programming Physics of Silicided Polysilicon Fuses
T. Doorn
IEEE Transactions on Electron Devices
2007
Corpus ID: 31455013
This paper presents a detailed qualitative model for the programming physics of 90-nm silicided polysilicon fuses that is derived…
Expand
2006
2006
Blowing Polysilicon Fuses: What Conditions are Best?
Yuanjing Li
,
A. Tang
IEEE International Integrated Reliability…
2006
Corpus ID: 35519854
A study has been conducted to understand polysilicon fuse blow mechanisms and determine optimized blow conditions. The…
Expand
2003
2003
An on-chip self-repair calculation and fusing methodology
D. Anand
,
Bruce Cowan
,
+4 authors
D. L. Wheater
IEEE Design & Test of Computers
2003
Corpus ID: 30655260
Laser fusing is a standard technique for improving yield with memory reconfiguration and repair, but implementing fusing in…
Expand
2001
2001
Bit line coupling scheme and electrical fuse circuit for reliable operation of high density DRAM
K. Lim
,
S. Kang
,
+5 authors
Byungil Ryu
Symposium on VLSI Circuits. Digest of Technical…
2001
Corpus ID: 41142755
Two design techniques are presented to improve the yield of high density DRAM product. One is bit line coupling (BLC) scheme and…
Expand
1986
1986
A new fusible-type programmable element composed of Aluminum and polysilicon
Y. Fukuda
,
S. Kohda
,
K. Masuda
,
Y. Kitano
IEEE Transactions on Electron Devices
1986
Corpus ID: 23607864
This paper describes the structure and programming characteristics of newly developed fusible-type programmable element called an…
Expand
1983
1983
A 16K CMOS PROM with polysilicon fusible links
L.R. Metzger
IEEE Journal of Solid-State Circuits
1983
Corpus ID: 42941301
A 16K synchronous CMOS PROM with polysilicon fusible links and a 2K-word by 8-bit organization is described. The memory cell…
Expand
1982
1982
An 80 ns 32K EEPROM using the FETMOS cell
Clinton Kuo
,
J. Yeargain
,
+4 authors
Alan R. Bormann
IEEE Journal of Solid-State Circuits
1982
Corpus ID: 28435036
A 32K bit EEPROM using the FETMOS (floating-gate electron tunneling MOS) cell has achieved a typical access time of 80 ns and a…
Expand
1981
1981
Programming mechanism of polysilicon fuse links
D. Greve
International Electron Devices Meeting
1981
Corpus ID: 28438420
We have studied the programming mechanism of polysilicon fuse links using both electrical measurements and microstructure studies…
Expand
1976
1976
Reliability Evaluation of Programmable Read-Only Memories (PROMs).
T. M. Donnelly
,
W. W. Powell
,
C. DeWitt
,
D. R. Jerand
,
M. Penberg
1976
Corpus ID: 60014043
Abstract : The primary objectives of this study were to: (1) assess unique factors affecting the reliability of 1024-bit open…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE