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Nitric Oxide 0.08 % / Nitrogen 99.92 % Gas for Inhalation
Known as:
nitric oxide 800 PPM Gas for Inhalation
National Institutes of Health
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Related topics
Related topics
8 relations
Broader (1)
Anesthetics, Inhalation
Drug Allergy
Gas for Inhalation
Infant, Newborn
Nitric Oxide
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Papers overview
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2014
2014
Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3 Stacks for High-Performance MIM Capacitors
Qiu-Xiang Zhang
,
B. Zhu
,
+4 authors
Wei Zhang
IEEE Electron Device Letters
2014
Corpus ID: 25597768
Metal-insulator-metal (MIM) capacitors with full atomic-layer-deposition Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub>/SiO<sub>2…
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2013
2013
Improved Leakage and Reliability for ${\rm ZrLaO}_{x}/{\rm ZrTiO}_{x}/{\rm ZrLaO}_{x}$-Based MIM Capacitors by Plasma Nitridation
Chia‐Chun Lin
,
Yung-Hsien Wu
,
Ren-Siang Jiang
,
Yu-bo Lin
,
Meng-Ting Yu
,
Cherng-En Sun
IEEE Electron Device Letters
2013
Corpus ID: 38815107
In this letter, ZrLaO<sub>x</sub>/ZrTiO<sub>x</sub>/ZrLaO<sub>x</sub> laminate is employed as the platform for investigating the…
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2009
2009
Structural and Electrical Properties of Mn-Doped $ \hbox{Bi}_{4}\hbox{Ti}_{3}\hbox{O}_{12}$ Thin Film Grown on $ \hbox{TiN}/\hbox{SiO}_{2}/\hbox{Si}$ Substrate for RF MIM Capacitors
Joo-Young Choi
,
L. Kang
,
+5 authors
Jong-hee Kim
IEEE Transactions on Electron Devices
2009
Corpus ID: 44500530
Mn-doped Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (M-B<sub>4</sub>T<sub>3</sub>) films were well formed on a TiN/SiO<sub>2</sub…
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2004
2004
A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies
K. Vaed
,
E. Eshun
,
+4 authors
J. Dunn
Digest of Papers. Topical Meeting onSilicon…
2004
Corpus ID: 13386259
We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (<40 ppm/V) for a high-k MIM…
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