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MIS complex

Known as: WMM complex, Mum2, Ime4, and Slz1 complex, WMM complex location 
An mRNA methyltransferase complex that catalyzes the post-transcriptional methylation of adenosine to form N6-methyladenosine (m6A). In budding yeast… 
National Institutes of Health

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$
This letter presents an analysis of N-polar metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a… 
2018
2018
Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry
A novel early gate dielectric AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) process is… 
2016
2016
Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs
SiNx deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) technique at low temperature (70 °C) was… 
2016
2016
The III-Nitride Double Heterostructure Revisited: Benefits for Threshold Voltage Engineering of MIS Devices
GaN-based devices are seen as ideal candidates for power-switching applications. For the acceptance of GaN-based devices by… 
2015
2015
Factors influencing women’s sexual health and reproductive choices in Estonia
2012
2012
A HfO2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology
Innovative 800V/300°C AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) fabricated with a 4-inch Si CMOS compatible… 
2009
2009
High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency
A high-performance N-face GaN metal-insulator-semiconductor high-electron-mobility transistor was fabricated. A dual-AlN back… 
2007
2007
Cantilever-Based Tactile Sensor with Improved Sensitivity for Dimensional Metrology of Deep Narrow Drillings
The paper reports on a tactile force sensor for the dimensional metrology of deep narrow drillings. The sensor consists of an up… 
2006
2006
30-nm-gate AlGaN/GaN MIS-HFETs with 180 GHz fT
AlGaN/GaN heterostructure field-effect transistors (HFETs) are excellent candidates for high power and high frequency… 
2002
2002
Stability Testing of Two-Dimensional Discrete-Time Systems by a Scattering-Type Stability Table and Its Telepolation
Stability testing of two-dimensional (2-D) discrete-time systems requires decision on whether a 2-D (bivariate) polynomial does… 
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