Skip to search formSkip to main contentSkip to account menu

Luttinger parameter

Known as: Luttinger hamiltonian 
In semiconductors, valence bands are well characterized by 3 Luttinger parameters. At the Г-point in the band structure, and orbitals form valence… 
Wikipedia (opens in a new tab)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Charge fractionalization in artificial Tomonaga-Luttinger liquids with controlled interaction strength
We investigate charge fractionalizations in artificial Tomonaga-Luttinger liquids (TLLs) composed of two capacitively coupled… 
2013
2013
Effect of Shape Anisotropy and Size on the Electronic Structure of CdSe/ZnSe Quantum Dots
The effect of shape anisotropy and size on the electronic structure of CdSe/ZnSe quantum dots is theoretically investigated. The… 
2012
2012
Physics-Based Band Gap Model for Relaxed and Strained [100] Silicon Nanowires
In this paper, we propose a physics-based simplified analytical model of the energy band gap and electron effective mass in a… 
2010
2010
Charge-spin duality in nonequilibrium transport of helical liquids
Non-equilibrium transport properties of charge and spin sector of two edges of a quantum spin Hall insulator are investigated… 
2010
2010
Design of a GaN White Light-Emitting Diode Through Envelope Function Analysis
In this paper, we present an envelope function analysis technique for the design of the emission spectra of a white quantum-well… 
2010
2010
Field and temperature dependence of NMR relaxation rate in the magnetic quadrupolar liquid phase of spin-12frustrated ferromagnetic chains
It is generally difficult to experimentally distinguish magnetic multipolar orders in spin systems. Recently, it was proposed… 
2003
2003
Strategic Alliances and Sustainable Coffee Production : the shaded system of Baturite , State of Ceara , Brazil
The study aims to assess the entry of coffee producers into the specialty coffee segment that is differentiated by social and… 
1999
1999
Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory
We present a study of the main features of a two-dimensional hole gas confined near a Si–SiO2 heterointerface. Starting from the… 
1997
1997
Theory of acceptor-ground-state description and hot photoluminescence in cubic semiconductors
An approach to the theory of the acceptor ground state in cubic semiconductors is presented. The model has been developed within… 
Highly Cited
1992
Highly Cited
1992
Nonlinear gain effects due to carrier heating and spectral holeburning in strained-quantum-well lasers
The authors present numerical results for the nonlinear gain effects due to carrier heating and spectral holeburning in 50 AA… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)