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Low level injection
Low level injection conditions for a P-N junction refers to the state where the number of minority carriers generated are small compared to the…
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2013
2013
Si Microwire Array Photoanodes for Artificial Photosynthetic Devices
Elizabeth A. Santori
2013
Corpus ID: 109464781
To realize the large-scale deployment of solar power, new materials and strategies must be developed for the fabrication of…
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2011
2011
ICAER 2011 EFFECT OF INDIUM CONCENTRATION ON METAL/N-INXGA1-XN SCHOTTKY JUNCTION SOLAR CELL UNDER LOW-LEVEL INJECTION
P. Mahala
,
S. Behura
,
A. Ray
,
C. Dhanavantri
,
O. Jani
,
Pandit Deendayal
2011
Corpus ID: 98704404
The cut-off of Schottky behaviour for Indium Gallium Nitride (InxGa1-xN) Schottky junction solar cell (Metal/nInGaN) as a…
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2011
2011
ANALYTICAL ESTIMATE OF OPEN-CIRCUIT VOLTAGE OF A SCHOTTKY-BARRIER SOLAR CELL UNDER HIGH LEVEL INJECTION
P. Mahala
,
S. Behura
,
A. Ray
,
Pandit Deendayal
2011
Corpus ID: 134377376
The open-circuit voltage developed across a Schottky-Barrier (SB) solar cell was theoretically modeled to estimate it under high…
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2011
2011
Accelerated analysis of low-level injection operation for transistor-based oscillating amplifiers
E. Calandra
,
M. Caruso
,
Daniele Lupo
2011
Corpus ID: 113901235
The problem of the accelerated analysis of oscillating amplifiers is addressed. To achieve both computational efficiency and…
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2011
2011
A MODEL ON THE EFFECT OF INJECTION LEVELS OVER THE OPEN-CIRCUIT VOLTAGE OF SCHOTTKY BARRIER SOLAR CELLS
S. Behura
,
P. Mahala
,
A. Ray
,
Pandit Deendayal
2011
Corpus ID: 52372670
The open-circuit voltage, Voc developed across a Schottky-barrier (SB) solar cell has been modeled and calculated under low and…
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2003
2003
Evidence for particle injection as the cause of D st reduction during HILDCAA events
K. Aarsnesa
,
K. Oksavika
,
M. I. Sandangera
,
D. Evansb
,
M. S. Greerb
2003
Corpus ID: 73714321
The Earth’s magnetic 8eld at the equator, as monitored by the Dst index, can stay below its quiet day value for days. This can…
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1992
1992
Parasitic substrate effects in gallium arsenide monolithic MESFETs
D. Shulman
1992
Corpus ID: 138418463
The present large scale GaAs integrated circuit industry is based on the fabrication of metalsemiconductor field-effect…
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1989
1989
An analytical model for BiCMOS logic transient response allowing parameter variations
P. Heedley
,
R. Jaeger
Proceedings of the IEEE Custom Integrated…
1989
Corpus ID: 62316113
A closed-form analytic model for the transient response of a BiCMOS inverter has been demonstrated which allows the gate delay to…
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1985
1985
Characteristics and performance of silicon solar cells between low-and high-level injection—Part II: Results of the study
M. Wolf
,
M. Wolf
IEEE Transactions on Electron Devices
1985
Corpus ID: 29976193
Applying the extension of the transport velocity transformation method described in Part I of this paper [1], the I-V…
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1984
1984
Final Report: Theory of Advanced High Efficiency Concentrator Cells
Mark Lunstrom
,
R. J. Schwartz
,
C. Maziar
,
P. Demoulin
1984
Corpus ID: 115900466
The goal of this project was to begin -developing accurate, and ultimately predictive, device models for III-V concentrator cells…
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