Skip to search formSkip to main contentSkip to account menu

Low level injection

Low level injection conditions for a P-N junction refers to the state where the number of minority carriers generated are small compared to the… 
Wikipedia (opens in a new tab)

Related topics

Related topics

1 relation
Semiconductor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors
2016
2016
Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications
Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications 
2014
2014
Operation of lightly doped Si microwires under high-level injection conditions†
The operation of lightly doped Si microwire arrays under high-level injection conditions was investigated by measurement of the… 
2011
2011
ICAER 2011 EFFECT OF INDIUM CONCENTRATION ON METAL/N-INXGA1-XN SCHOTTKY JUNCTION SOLAR CELL UNDER LOW-LEVEL INJECTION
The cut-off of Schottky behaviour for Indium Gallium Nitride (InxGa1-xN) Schottky junction solar cell (Metal/nInGaN) as a… 
2011
2011
ANALYTICAL ESTIMATE OF OPEN-CIRCUIT VOLTAGE OF A SCHOTTKY-BARRIER SOLAR CELL UNDER HIGH LEVEL INJECTION
The open-circuit voltage developed across a Schottky-Barrier (SB) solar cell was theoretically modeled to estimate it under high… 
2010
2010
A computerized method for carrier lifetime measurement in PN junctions at high and low-level injection
A system to determine the minority carrier lifetime in PN semiconductor junctions in the range of 50 ns to 100 ?s has been… 
2008
2008
Comparison of n- and p-type high efficiency silicon solar cell performance under low illumination conditions
For scavenging energy out of the environment, it is very important for solar cells to maintain the efficiency at low light… 
1996
1996
High gain p-n-p gated lateral bipolar action in a fully depleted counter-type channel p-MOSFET structure
1985
1985
Characteristics and performance of silicon solar cells between low-and high-level injection—Part II: Results of the study
Applying the extension of the transport velocity transformation method described in Part I of this paper [1], the I-V… 
1981
1981
Electron trapping in SiO2—An injection mode dependent phenomenon
Electron trapping in MOS structures and its dependence on the injected electron energy distribution and oxide field were studied… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)