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LDD 175

Known as: LDD-175, LDD175 
National Institutes of Health

Papers overview

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2010
2010
De stemmen van het volk: Een analyse van het kiesgedrag in Vlaanderen en Wallonië op 7 juni 2009
Precies een jaar na de regionale verkiezingen van 7 juni 2009 verschijnt bij VUBPRESS het boek De stemmen van het volk van de… 
2003
2003
Oxide reliability of drain engineered I/O NMOS from hot carrier injection
The impact of hot carrier stress on the breakdown properties of I/O NMOS gate oxide is reported. I/O NMOS devices with drain… 
2003
2003
Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation
The validity and capability of an iterative coupling scheme between single-particle frozen-field Monte Carlo simulations and… 
1997
1997
Investigation of interface traps in LDD pMOST's by the DCIV method
Interface traps in submicron buried-channel LDD pMOSTs, generated under different stress conditions, are investigated by the… 
1996
1996
Advanced CMOS protection device trigger mechanisms during CDM
The Charged Device Model (CDM) is now considered to be an important stress model for defining ESD reliability of IC chips. This… 
1989
1989
An efficient semi-empirical model of the I-V characteristics for LDD MOSFETS
A unified and computationally efficient SPICE model for accurate prediction of the I-V characteristics of small-geometry lightly… 
1987
1987
A 1.4-million-element CCD image sensor
A 2/3" format 1.4 megapixel full-frame CCD image sensor with a cell size of6.8×6.8μm, that achieves a quantum efficiency of 50… 
1986
1986
A novel submicron LDD transistor with inverse-T gate structure
A novel submicron LDD transistor is demonstrated in which there is a thin extension of the gate polysilicon under the oxide… 
Highly Cited
1984
Highly Cited
1984
Evaluation of LDD MOSFET's based on hot-electron-induced degradation
Hot-electron-induced device degradation in LDD MOSFET's is thoroughly studied. Conventional ways to characterize device… 
1984
1984
Hot carrier degradation modes and optimization of LDD MOSFETs
The hot carrier instability and the related device characteristics of Leff= 1µm MOSFETs with Lightly Doped Drain (LDD) structure… 
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