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K·p perturbation theory

Known as: K.p perturbation theory, K.p, K dot p theory 
In solid-state physics, k·p perturbation theory is an approximation scheme for calculating the band structure (particularly effective mass) and… 
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Related topics

Related topics

10 relations
Electron holeElectronic band structureHamiltonian (quantum mechanics)Kohn–Sham equations

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Odpowiedzialność za szkodę wyrządzoną osobie trzeciej przy wykonywaniu obowiązków pracowniczych – uwagi na tle art. 120 k.p.
The scope of application of Art. 120 § 1 of the Labour Code refers to employee’s liability for damage caused in the performance… 
2013
2013
Surface States of Topological Crystalline Insulators in IV-VI Semiconductors
Topological crystalline insulators (TCI) are new topological phases of matter protected by crystal symmetry of solids. Recently… 
2013
2013
Non-perturbative laser effects on the electrical properties of graphene nanoribbons
The use of Floquet theory combined with a realistic description of the electronic structure of illuminated graphene and graphene… 
2012
2012
High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
We demonstrate for the first time, asymmetrically strained Ge, high-κ/metal gate nanowire (NW) trigate p-MOSFETs with record hole… 
2010
2010
SnGe Asymmetric Quantum Well Electroabsorption Modulators for Long-Wave Silicon Photonics
In recent years, SiGeSn alloys have been considered as promising materials for optoelectronic applications because they offer the… 
Highly Cited
2008
Highly Cited
2008
8-band k.p modeling of the quantum confined Stark effect in Ge quantum wells on Si substrates
Recent work using compressively strained-Ge quantum wells grown on S 1-y Ge y virtual substrates has demonstrated efficient… 
2008
2008
MOCVD-Grown Dilute Nitride Type II Quantum Wells
Dilute nitride Ga(In)NAs/GaAsSb ldquoWrdquo type II quantum wells on GaAs substrates have been grown by metal-organic chemical… 
2004
2004
Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress
We have developed a quantum anisotropic transport model for holes which, for the first time, allows mobility to be studied under… 
Highly Cited
1998
Highly Cited
1998
High-Energy Excitonic Transitions in CdSe Quantum Dots
An atomistic direct diagonalization pseudopotential approach has been used to analyze the optical excitation spectra of CdSe… 
1997
1997
Can coupling with remote conduction bands cause a sufficient normal-incidence absorption in n-type direct-gap semiconductor quantum wells?
Surprisingly, several experiments have reported that normal- incidence light absorption due to inter-conduction-subband… 
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