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Interface Device Component
Known as:
Interface
Either a program that controls a display for the user and that allows the user to interact with the system or a computer circuit consisting of the…
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National Institutes of Health
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Related topics
2 relations
Medical Device Component or Accessory
User Interface Device Component
Papers overview
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Highly Cited
1994
Highly Cited
1994
Local interface composition and band discontinuities in heterovalent heterostructures.
Nicolini
,
Vanzetti
,
+9 authors
Gerberich
Physical Review Letters
1994
Corpus ID: 32733443
Highly Cited
1993
Highly Cited
1993
Growth of the room temperature Au/Si(111)-7 x 7 interface.
J. Yeh
,
J. Hwang
,
K. Bertness
,
D. Friedman
,
R. Cao
,
I. Lindau
Physical Review Letters
1993
Corpus ID: 33370777
Synchrotron radiation photoemission spectroscopy suggests that the room temperature grown Au/Si(111) interface is an abrupt…
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Highly Cited
1992
Highly Cited
1992
Elucidating complex surface reconstructions with atomic-resolution scanning tunneling microscopy: Au(100)-aqueous electrochemical interface.
Xiaoping Gao
,
A. Hamelin
,
M. J. Weaver
Physical Review B (Condensed Matter)
1992
Corpus ID: 45927720
Abstract : The utilization of scanning tunneling microscopy (STM) with high-quality atomic resolution for elucidating complex…
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Highly Cited
1991
Highly Cited
1991
Structure of thin metastable epitaxial Fe films on Cu(100): Reconstruction and interface ordering by coating.
Magnan
,
Chandesris
,
Villette
,
Heckmann
,
Lecante
Physical Review Letters
1991
Corpus ID: 38584822
Surface extended x-ray-absorption fine structure is used to determine the crystallographic structure of iron films grown on Cu…
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Highly Cited
1990
Highly Cited
1990
Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110).
Dinardo
,
Wong
,
Plummer
Physical Review Letters
1990
Corpus ID: 435436
Electronic excitation spepctra of an ultrathin Cs/GaAs(110) interface have been measured at various stages of development with…
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Highly Cited
1990
Highly Cited
1990
Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole.
Muoz
,
Chetty
,
Mártin
Physical Review B (Condensed Matter)
1990
Corpus ID: 8403733
We have carried out ab initio self-consistent calculations to investigate the extent to which the band offset can be modified by…
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Highly Cited
1988
Highly Cited
1988
Bonding at the K/Si(100) 2 x 1 interface: A surface extended x-ray-absorption fine-structure study.
Kendelewicz
,
Soukiassian
,
+4 authors
Spicer
Physical Review B (Condensed Matter)
1988
Corpus ID: 41950228
Using surface extended x-ray-absorption fine-structure spectroscopy we establish the K-Si bond length to be 3.14\ifmmode\pm\else…
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Highly Cited
1987
Highly Cited
1987
High-resolution photoemission study of Co/Si(111) interface formation.
Boscherini
,
Joyce
,
Ruckman
,
Weaver
Physical Review B (Condensed Matter)
1987
Corpus ID: 38076852
We have examined the formation of the Co/Si(111) interface at room temperature using high-resolution core-level photoemission…
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Highly Cited
1986
Highly Cited
1986
Observation of long-wavelength interface phonons in a GaAs/AlGaAs superlattice.
Lambin
,
Vigneron
,
+5 authors
Kuech
Physical Review Letters
1986
Corpus ID: 34258616
Highly Cited
1983
Highly Cited
1983
Effective field theory for interface delocalization transitions
R. Lipowsky
,
D. M. Kroll
,
R. Zia
1983
Corpus ID: 56208006
Semi-infinite systems are considered which give rise to a delocalization transition of the interface between two coexisting…
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