Infant Swings

Known as: Baby Swings, Swing, Infant, Baby Swing 
 
National Institutes of Health

Topic mentions per year

Topic mentions per year

1998-2017
024619982017

Papers overview

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2017
2017
Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec-1 by exploiting the negative-capacitance (NC) effect… (More)
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2016
2016
Tunnel FETs (TFETs) have been identified as the most promising steep slope devices for ultralow power logic circuits. In this… (More)
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2015
2015
Summary form only given. Tunneling Field Effect Transistors (TFETs) have the potential to achieve a low operating voltage by… (More)
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2015
2015
BACKGROUND Hamstring injuries are common in many sports, including track and field. Strains occur in different parts of the… (More)
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2013
2013
In this work, accumulation-mode (AM) p-channel wrap-gated FinFETs and AM p-channel planar FETs are fabricated using top-down… (More)
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2013
2013
GaN is a promising material for LED lighting [1], high voltage power electronics [2] and high power RF applications [3]. GaN HEMT… (More)
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2013
2013
We present in this paper a basic compact model incorporating several key physical mechanisms in nanowire tunneling field-effect… (More)
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2013
2013
While a few singular reports have demonstrated carbon nanotube (CNT) transistors with subthreshold swings (SS) close to the… (More)
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Highly Cited
2005
Highly Cited
2005
For the first time, we have successfully fabricated gate-all-around twin silicon nanowire transistor (TSNWFET) on bulk Si wafer… (More)
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2004
2004
For better subthreshold swing (SS) and drain induced barrier lowering (DIBL) of FinFETs, the fin width is a more important… (More)
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