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Infant Swings

Known as: Baby Swings, Swing, Infant, Baby Swing 
National Institutes of Health

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Infant Equipment

Papers overview

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Highly Cited
2017
Highly Cited
2017
Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing
Negative capacitance (NC) GeSn pFETs integrated with HfZrO<sub><italic>x</italic></sub> (HZO) ferroelectric film is demonstrated… 
Highly Cited
2016
Highly Cited
2016
GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing
Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well… 
Highly Cited
2015
Highly Cited
2015
Low-temperature fabrication of high performance indium oxide thin film transistors
In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a solution-process at low temperature. A… 
2015
2015
Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS
This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate… 
Highly Cited
2015
Highly Cited
2015
Effects of Electrostatically Doped Source/Drain and Ferroelectric Gate Oxide on Subthreshold Swing and Impact Ionization Rate of Strained-Si-on-Insulator Tunnel Field-Effect Transistors
This letter reports an electrostatically doped source/drain (EDSD) ferroelectric strained-Si-on-insulator (Fe-SSOI) tunnel field… 
2013
2013
Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate
GaN is a promising material for LED lighting [1], high voltage power electronics [2] and high power RF applications [3]. GaN HEMT… 
Highly Cited
2011
Highly Cited
2011
InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides
In<sub>0.7</sub>Ga<sub>0.3</sub>As tunneling field-effect-transistors (TFETs) using the p<sup>+</sup> (6 nm)/undoped (6 nm… 
2011
2011
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical… 
Highly Cited
1997
Highly Cited
1997
Design and implementation of differential cascode voltage switch with pass-gate (DCVSPG) logic for high-performance digital systems
In this paper, a new high-speed circuit technique called differential cascode voltage switch with pass-gate (DCVSPG) logic tree… 
Highly Cited
1994
Highly Cited
1994
A high speed, low power, swing restored pass-transistor logic based multiply and accumulate circuit for multimedia applications
Swing Restored Pass-transistor Logic (SRPL), a high speed, low power logic circuit technique for VLSI applications is described… 
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