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Infant Swings

Known as: Baby Swings, Swing, Infant, Baby Swing 
 
National Institutes of Health

Papers overview

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Highly Cited
2016
Highly Cited
2016
We report the first ferroelectric (FE) HfZrOx (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40∼43 mV… Expand
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Highly Cited
2015
Highly Cited
2015
Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density… Expand
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Highly Cited
2014
Highly Cited
2014
Resistive RAM (ReRAM) is a promising nonvolatile memory with low write energy, logic-process compatibility, and compact cell area… Expand
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Highly Cited
2014
Highly Cited
2014
This paper presents a 2-D analytic potential model for double-gate (DG) tunnel field effect transistors (TFETs) by solving the 2… Expand
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Highly Cited
2011
Highly Cited
2011
This work demonstrates the steepest subthreshold swing (SS < 60mV/decade) ever reported in a III–V Tunneling Field Effect… Expand
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Highly Cited
2011
Highly Cited
2011
This letter presents a Si nanowire based tunneling field-effect transistor (TFET) using a CMOS-compatible vertical gate-all… Expand
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Highly Cited
2011
Highly Cited
2011
We present a vertical-silicon-nanowire-based p-type tunneling field-effect transistor (TFET) using CMOS-compatible process flow… Expand
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Highly Cited
2011
Highly Cited
2011
In<sub>0.7</sub>Ga<sub>0.3</sub>As tunneling field-effect-transistors (TFETs) using the p<sup>+</sup> (6 nm)/undoped (6 nm… Expand
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Highly Cited
2007
Highly Cited
2007
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV… Expand
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Highly Cited
2005
Highly Cited
2005
For the first time, we have successfully fabricated gate-all-around twin silicon nanowire transistor (TSNWFET) on bulk Si wafer… Expand
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