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Infant Swings

Known as: Baby Swings, Swing, Infant, Baby Swing 
National Institutes of Health

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Infant Equipment

Papers overview

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Highly Cited
2017
Highly Cited
2017
Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.
Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec-1 by exploiting the negative-capacitance (NC) effect… 
Highly Cited
2016
Highly Cited
2016
Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids
We report the first ferroelectric (FE) HfZrOx (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40∼43 mV… 
Highly Cited
2016
Highly Cited
2016
Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current
This article proposes a disruptive device concept which meets both low power and high performance criterion for post-CMOS… 
Highly Cited
2014
Highly Cited
2014
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme
Resistive RAM (ReRAM) is a promising nonvolatile memory with low write energy, logic-process compatibility, and compact cell area… 
Highly Cited
2014
Highly Cited
2014
A 2-D Analytical Model for Double-Gate Tunnel FETs
This paper presents a 2-D analytic potential model for double-gate (DG) tunnel field effect transistors (TFETs) by solving the 2… 
Highly Cited
2014
Highly Cited
2014
Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect… 
Highly Cited
2013
Highly Cited
2013
On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit
The ultimate scaling limit of double-gate molybdenum disulfide (MoS2) field-effect transistors (FETs) with a monolayer thin body… 
Highly Cited
2011
Highly Cited
2011
Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature
This letter presents a Si nanowire based tunneling field-effect transistor (TFET) using a CMOS-compatible vertical gate-all… 
Highly Cited
2011
Highly Cited
2011
InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides
In<sub>0.7</sub>Ga<sub>0.3</sub>As tunneling field-effect-transistors (TFETs) using the p<sup>+</sup> (6 nm)/undoped (6 nm… 
Highly Cited
2005
Highly Cited
2005
High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability
  • S. SukS. Lee B. Ryu
  • IEEE InternationalElectron Devices Meeting…
  • 2005
  • Corpus ID: 34813487
For the first time, we have successfully fabricated gate-all-around twin silicon nanowire transistor (TSNWFET) on bulk Si wafer… 
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