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IMD3

IMD3 refers to the intermodulation distortion from the third order of a circuit. It is of particular importance in narrow band signals because its… Expand
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Design of continuous broadband efficient and linear power amplifier based on two-tone signal analysis
In this paper, an innovative approach to achieve broadband linear power amplifier (PA) with a continuous broadband is presented… Expand
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2016
2016
A Linear InGaP/GaAs HBT Power Amplifier Using Parallel-Combined Transistors With IMD3 Cancellation
In this letter, we present a linear InGaP/GaAs HBT power amplifier (PA) with parallel-combined transistors for small-cell… Expand
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Highly Cited
2013
Highly Cited
2013
A 60-GHz Dual-Mode Class AB Power Amplifier in 40-nm CMOS
A 60-GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology. To boost the amplifier performance at… Expand
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2011
2011
Digital linearization technique for IMD3 suppression in intensity-modulated analog optical links
A novel technique to suppress the third-order intermodulation distortion (IMD3) in intensity-modulated analog links based on… Expand
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2009
2009
A Highly Linear Wideband Up-Conversion Differential CMOS Micromixer Using IMD3 Cancellation for a Digital TV Tuner IC
In this letter, a highly linear wideband up-conversion differential CMOS micromixer with a linearized transconductor employing a… Expand
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2009
2009
A Highly Linear Wideband Up-Conversion Differential CMOS Micromixer Using IMD3 Cancellation for a Digital TV Tuner IC
In this letter, a highly linear wideband up-conversion differential CMOS micromixer with a linearized transconductor employing a… Expand
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2008
2008
Reduction of electrical baseband memory effect in high-power LDMOS devices using optimum termination for IMD3 and IMD5 using active load-pull
The usual approach in minimizing electrical memory in PA design is to terminate base-band impedances into a broadband short… Expand
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2008
2008
High power waveform measurement system enabling characterisation of high power devices including memory effects
The increasing demand for higher data rates in wireless communication systems has led to the more effective and efficient use of… Expand
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2007
2007
Investigation of IMD3 in GaN HEMT based on extended volterra series analysis
This paper mainly focuses on providing theoretical justification for possible GaN device linearity improvement, interpretating… Expand
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2005
2005
pHEMT 전력 증폭기의 IMD₃ 비대칭성과 ACPR 특성 해석
 
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