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Holding current (electronics)

Known as: Holding current 
The holding current (hypostatic) for electrical, electromagnetic and electronic devices is the minimum current which must pass through a circuit in… 
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Related topics

Related topics

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Broader (1)

Power electronics
Silicon controlled rectifierSpark-gap transmitterTRIACThyristor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated… 
2015
2015
Pulse-induced crystallization in phase-change memories under set and disturb conditions
We introduce a new technique to study the crystallization process in phase-change memory. By this technique, crystallization is… 
2015
2015
Design and Characterization of a High-Precision Digital Electromagnetic Actuator with Four Discrete Positions
A high-precision planar digital electromagnetic actuator with two displacement directions and four discrete positions is… 
2008
2008
ICCOS Countercurrent-Thyristor High-Power Opening Switch for Currents Up to 28 kA
Inductive energy storage systems require opening switches which are technically much more difficult to realize than closing… 
Review
2005
Review
2005
Advanced SCR ESD protection circuits for CMOS/SOI nanotechnologies
This paper reviews the application of SCR-based ESD protection circuits in advanced CMOS/SOI technologies. The devices are… 
Highly Cited
2002
Highly Cited
2002
High Holding Current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation
2001
2001
Dynamic and Static Characteristics of MOS Thyristors Irradiated with Electrons
The results of development and manufacture of MOS controlled thyristors (MCT) are presented. Static and dynamic characteristics… 
1989
1989
A computer-aided GTO model for power electronic circuit design
A model is presented of the gate-turn-off thyristor (GTO), which can be matched to measured data and incorporated in the SPICE… 
Highly Cited
1984
Highly Cited
1984
A CMOS Structure with high latchup holding voltage
Latchup free operation is demonstrated in CMOS by attaining holding voltages in excess of Vdd(5V). A thin epitaxial layer over a… 
Highly Cited
1984
Highly Cited
1984
Latchup model for the parasitic p-n-p-n path in bulk CMOS
The inherent parasitic bipolar transistors and p-n-p-n paths in monolithic CMOS circuits can be undesirably triggered into the… 
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