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Gigaxonin, human

Known as: GAN, Kelch-Like Family Member 16, Gigaxonin 
Gigaxonin (597 aa, ~68 kDa) is encoded by the human GAN gene. This protein plays a role in the modulation of both protein ubiquitination and… 
National Institutes of Health

Related topics

Related topics

10 relations
BTB-POZ DomainBrainCytoplasmCytoskeletal Process

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
The role of intermediate layers in thermal transport across GaN/SiC interfaces
Interfaces between solid layers in power electronics contribute significantly to the overall thermal resistance, which is a… 
2017
2017
Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions
Electrical properties of p<sup>+</sup>-GaAs/n-GaN and n<sup>+</sup>-GaAs/n-GaN, heterojunctions fabricated by using surface… 
2015
2015
A modeling and experimental method for accurate thermal analysis of AlGaN/GaN powerbars
In this work we present a novel and comprehensive method for thermal characterization of GaN based transistors. By means of two… 
2010
2010
Thermal Behavior of the Mechanical Properties of GaN throughout Hydrogen-Induced Thin Layer Transfer
commonly known as the ion-cut or Smart-Cut TM . The control and the application of this process to cleave thin layers from bulk… 
2010
2010
Nonlinear interaction of space charge waves in GaN films
The nonlinear interaction of space charge waves including amplification and conversion to high frequencies in n-GaN semiconductor… 
2009
2009
Electrical properties of GaN/poly(3-hexylthiophene) interfaces
Interfaces between wide-bandgap semiconductors and polymeric electronic materials are model systems for geometrically more… 
2009
2009
Structure and electrical properties of [0001] GaN nanowires
We perform density functional theory within the generalized gradient approximation to investigate infinitely wurtzite bare GaN… 
2005
2005
Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials
The band-gap shift of GaN has been examined as a function of uniaxial compression along the c axis using time-resolved, optical… 
2000
2000
Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy
Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces… 
1994
1994
Electronic Structure of Cubic GaN with Self-Energy Corrections
We present the results of a calculation for the bulk electronic structure of gallium nitride in the zincblende phase. We… 
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