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High-power GaN-based electronics are limited by high channel temperature induced by self-heating, which degrades device… Expand Hot-electron temperature (Te) in InAlN/GaN high-electron-mobility transistors (HEMTs) was determined using electroluminescence… Expand The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin… Expand We fabricate flexible GaN-based light-emitting diode (LED) systems by laser lift-off (LLO) and transfer printing methods. LLO… Expand We have carried out systematic experiments of the electrical reliability of state-of-the-art GaN HEMTs. We have found that… Expand The band-gap shift of GaN has been examined as a function of uniaxial compression along the c axis using time-resolved, optical… Expand A convenient thermal CVD route to core−shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that… Expand Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces… Expand Temperature-dependent Hall-effect measurements are performed on cubic GaN layers grown by plasmaassisted molecular-beam epitaxy… Expand We present the results of a calculation for the bulk electronic structure of gallium nitride in the zincblende phase. We… Expand