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Field Programmable Nanowire Interconnect
Field Programmable Nanowire Interconnect (often abbreviated FPNI) is a new computer architecture developed by Hewlett-Packard. This is a defect…
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Computer architecture
Field-programmable gate array
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Phosphorus-Doped p–n Homojunction ZnO Nanowires: Growth Kinetics in Liquid and Their Optoelectronic Properties
Wei-Che Lee
,
Jui-Yuan Chen
,
Chun-Wei Huang
,
C. Chiu
,
Ting-Yi Lin
,
Wen‐Wei Wu
2015
Corpus ID: 59474477
For wide-ranging applications in nanoscale electronic devices, durable and reproducible p-type nanostructures are essential. In…
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2013
2013
Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects
T. Rudenko
,
R. Yu
,
S. Barraud
,
K. Cherkaoui
,
A. Nazarov
IEEE Electron Device Letters
2013
Corpus ID: 31905906
In this letter, we propose a new method to extract the doping concentration and flat-band voltage in junctionless (JL) multigate…
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2012
2012
Size-Dependent-Transport Study of In 0 . 53 Ga 0 . 47 As Gate-All-Around Nanowire MOSFETs : Impact of Quantum Confinement and Volume Inversion
J. Gu
,
Heng Wu
,
Yiqun Liu
,
A. Neal
,
R. Gordon
,
P. Ye
2012
Corpus ID: 44004229
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down…
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Highly Cited
2012
Highly Cited
2012
Schottky Diode Ultraviolet Detector Based on $ \hbox{TiO}_{2}$ Nanowire Array
Haifeng Zhang
,
S. Ruan
,
+4 authors
Weiyou Chen
IEEE Electron Device Letters
2012
Corpus ID: 54171
In this letter, a Schottky diode ultraviolet (UV) detector based on TiO2 nanowire (NW) array with Ag electrode is fabricated. The…
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2012
2012
Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD
S. M. Sultan
,
K. Sun
,
+7 authors
H. Chong
IEEE Electron Device Letters
2012
Corpus ID: 6366452
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO<sub>2</sub> pillar and…
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2011
2011
Adhesive Contact of Nanowire in Three-Point Bending Test
Yin Zhang
,
Ya-pu Zhao
2011
Corpus ID: 137005237
A new adhesive receding contact model is presented in this paper for a nanowire in a three-point bending test. Because of its…
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2010
2010
Simulation and design of core-shell GaN nanowire LEDs
B. Connors
,
M. Povolotskyi
,
R. Hicks
,
B. Klein
OPTO
2010
Corpus ID: 136602557
The high crystalline quality, large junction surface area, and insensitivity to c-axis oriented polarization fields make core…
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2008
2008
Design and fabrication of compact etched diffraction grating demultiplexers based on α-Si nanowire technology
Jun-Hwa Song
,
N. Zhu
IEEE/LEOS International Conference on Optical…
2008
Corpus ID: 40291872
Silicon nanowire waveguides and related etched diffraction grating (EDG) demultiplexers are studied by alpha-Si-on-SiO2…
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Highly Cited
2007
Highly Cited
2007
Epitaxial growth of MgO nanowires by pulsed laser deposition
K. Nagashima
,
T. Yanagida
,
Hidekazu Tanaka
,
T. Kawai
2007
Corpus ID: 93941019
We fabricated single-crystalline MgO nanowires epitaxially grown on MgO single crystal substrate using the Au catalyst-assisted…
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2006
2006
Electrical characterizations of a controllable field emission triode based on low temperature synthesized ZnO nanowires
Chia Ying Lee
,
T. Tseng
,
Seu Yi Li
,
P. Lin
2006
Corpus ID: 54585759
Fabrication and field emission properties of a ZnO nanowire (NW) triode were investigated in this study. The ZnO NWs have a…
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