Field Programmable Nanowire Interconnect

Field Programmable Nanowire Interconnect (often abbreviated FPNI) is a new computer architecture developed by Hewlett-Packard. This is a defect… (More)
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Topic mentions per year

2001-2018
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2015
2015
Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating highpurity III−Vs on silicon. The nature of the… (More)
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2013
2013
In this letter, we propose a new method to extract the doping concentration and flat-band voltage in junctionless (JL) multigate… (More)
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2012
2012
In this paper we report on a newly developed multigate nanowire (NW) based field-effect device (NWFET) where the transistor type… (More)
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2011
2011
Recently, researchers have demonstrated that memristive switches can be used to implement logic and latches as well as memory and… (More)
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2011
2011
In this paper, we model the electrical properties of the junctionless (JL) nanowire field-effect transistor (FET), which has been… (More)
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2009
2009
A comparison of nanowire FETs (NWFETs) of identical geometries but operating in two different regimes, namely, the quantum… (More)
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2008
2008
A novel ZnO seedless chemical approach for density-controlled growth of ZnO nanowire (NW) arrays has been developed. The density… (More)
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2008
2008
Parasitic S/D resistances in extremely scaled GAA nanowire devices can pathologically limit the device drive current performance… (More)
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Highly Cited
2007
Highly Cited
2007
A field-programmable nanowire interconnect (FPNI) enables a family of hybrid nano/CMOS circuit architectures that generalizes the… (More)
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2005
2005
Polypyrrole(PPy) nanowire modified electrodes were developed by template-free electrochemical method based on graphite electrode… (More)
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