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Faceting

Known as: Facet (disambiguation), Facetting 
In geometry, faceting (also spelled facetting) is the process of removing parts of a polygon, polyhedron or polytope, without creating any new… 
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Related topics

Related topics

9 relations
DodecahedronDual polyhedronFace (geometry)Polyhedron

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
Step-Edge Josephson Junctions on Multilayered High Temperature Superconducting Thin Film
Application of Josephson effect in sensors, electronic and metrological devices working at temperature of 77 K requires… 
2009
2009
Annealing effects on faceting of InAs∕GaAs(001) quantum dots
The aspect ratio and faceting evolution of quantum dots grown at 500°C were studied as a function of postgrowth annealing… 
2008
2008
Observation and modeling of a buried melt-freeze crust
Melt-freeze crusts often occur as a result of wet snow, rain or strong insolation. Past observations have revealed the formation… 
2005
2005
Evidence for a Diffusion-Based Mechanism of Liquid Metal Intergranular Penetration: Case Study of a Ni-Bi Model System
A model Ni-Bi system has been used to investigate intergranular penetration (IGP) phenomenon. All experiments have been done on… 
2005
2005
Nanostaircases: An atomic shadowing instability during epitaxial CrN(001) layer growth
Epitaxial CrN(001) layers, 57 and 230 nm thick, were grown on MgO(001) at 700 °C by ultrahigh-vacuum magnetron sputter deposition… 
2003
2003
Surface morphology control of InAs nanostructures grown on InGaAs/InP
The evolution of the surface morphology of InAs nanostructures grown on InGaAs/InP by molecular-beam epitaxy was studied through… 
2002
2002
Three-dimensional simulation of floating-zone crystal growth of oxide crystals
The floating-zone (FZ) method is a popular technique for the growth of high-temperature oxide crystals. However, the growth… 
1997
1997
In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy
Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP… 
1997
1997
Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
B-doped Si(001) films, with concentrations CB up to 1.7×1022 cm−3, were grown by gas-source molecular-beam epitaxy from Si2H6 and… 
Highly Cited
1991
Highly Cited
1991
Faceted crystal growth in two dimensions
CRYSTAL growth has attracted interest for centuries1. Three-dimensional crystals are usually faceted, but equilibrium… 
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