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Equivalent noise resistance

In telecommunication, an equivalent noise resistance is a quantitative representation in resistance units of the spectral density of a noise-voltage… Expand
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Effective input noise temperatureList of noise topicsNoise (signal processing)Noise temperature
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Papers overview

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2016
2016
No Noise Is Good Noise: Noise Matching, Noise Canceling, and Maybe a Bit of Both for Wide-Band LNAs
Researchers have described the concept of noise matching since at least the 1950s, with studies demonstrating the… Expand
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2010
2010
Analysis of equivalent noise resistance of surface and small volume coils by the finite element method
7S/m, μr = 1 and 10 mm in width). The sample (red region, σ = 0.8 S/m and μr = 1) was 400 mm in length with racetrack-shaped… Expand
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2009
2009
RF Noise of 65-nm MOSFETs in the Weak-to-Moderate-Inversion Region
In this letter, the RF noise performance of 65-nm MOSFETs with 60-, 90-, 130-, and 240-nm drawn gate lengths has been extensively… Expand
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2006
2006
An analytical method to determine MOSFET's high frequency noise parameters from 50-/spl Omega/ noise figure measurements
An analytical method, along with closed-form solutions, for extracting MOSFET's RF noise parameters is presented. This method… Expand
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2005
2005
2 GHz, 130 nm CMOS low noise amplifier for WCDMA
This work presents a 2 GHz LNA designed for WCDMA mobiles. The circuit is implemented in a 0.13 /spl mu/m CMOS technology. The… Expand
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2004
2004
Comments on "Cryogenic noise parameter measurements of microwave devices"
  • Wojciech Wiatr
  • IEEE Trans. Instrumentation and Measurement
  • 2004
    • Corpus ID: 1036162
For original paper see Rolfes et al. (IEEE Trans. Instrum. Meas., vol.50, p.373-6, 2001 April). With regard to the original paper… Expand
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2003
2003
Analysis of gate shot noise in MOSFETs with ultrathin gate oxides
The impact of gate shot noise associated with gate leakage current in MOSFETs is studied by means of analytical models and… Expand
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1997
1997
Influence of the temperature on the equivalent noise resistance of HEMT's at microwave frequencies
This paper is focused on the performance of the noise resistance R/sub n/ of HEMT's at microwave frequencies as a function of… Expand
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1997
1997
High frequency noise modeling of MOSFETs
. . \ The down-scaling of M O S ~ S to deepsubmicron dmensions and the resulting very high unity-gain frequencies of tens of… Expand
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1976
1976
Noise effects in bipolar junction transistors at cryogenic temperatures: Part II
In Part II of this investigation, a characterization of the output noise current generator i0of modern planar bipolar junction… Expand
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