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Equivalent noise resistance

In telecommunication, an equivalent noise resistance is a quantitative representation in resistance units of the spectral density of a noise-voltage… Expand
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Effective input noise temperatureList of noise topicsNoise (signal processing)Noise temperature
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
No Noise Is Good Noise: Noise Matching, Noise Canceling, and Maybe a Bit of Both for Wide-Band LNAs
Researchers have described the concept of noise matching since at least the 1950s, with studies demonstrating the… Expand
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2012
2012
Front-End Design for Compact MIMO Receivers: A Communication Theory Perspective
The front-end is a crucial component in modern wireless communication systems. For SISO systems minimizing the front-end noise… Expand
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2010
2010
Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates
In this paper, analytical modeling of high-frequency noise was carried out including temperature effects in AlGaN/GaN high… Expand
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2006
2006
An analytical method to determine MOSFET's high frequency noise parameters from 50-/spl Omega/ noise figure measurements
An analytical method, along with closed-form solutions, for extracting MOSFET's RF noise parameters is presented. This method… Expand
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2005
2005
2 GHz, 130 nm CMOS low noise amplifier for WCDMA
This work presents a 2 GHz LNA designed for WCDMA mobiles. The circuit is implemented in a 0.13 /spl mu/m CMOS technology. The… Expand
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2004
2004
Comments on "Cryogenic noise parameter measurements of microwave devices"
  • W. Wiatr
  • IEEE Trans. Instrum. Meas.
  • 2004
    • Corpus ID: 1036162
For original paper see Rolfes et al. (IEEE Trans. Instrum. Meas., vol.50, p.373-6, 2001 April). With regard to the original paper… Expand
2003
2003
Analysis of gate shot noise in MOSFETs with ultrathin gate oxides
  • C. Fiegna
  • IEEE Electron Device Letters
  • 2003
    • Corpus ID: 11613387
The impact of gate shot noise associated with gate leakage current in MOSFETs is studied by means of analytical models and… Expand
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1997
1997
High frequency noise modeling of MOSFETs
. . \ The down-scaling of M O S ~ S to deepsubmicron dmensions and the resulting very high unity-gain frequencies of tens of… Expand
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1997
1997
Influence of the temperature on the equivalent noise resistance of HEMT's at microwave frequencies
This paper is focused on the performance of the noise resistance R/sub n/ of HEMT's at microwave frequencies as a function of… Expand
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1976
1976
Noise effects in bipolar junction transistors at cryogenic temperatures: Part II
In Part II of this investigation, a characterization of the output noise current generator i0of modern planar bipolar junction… Expand
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