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Equivalent noise resistance

In telecommunication, an equivalent noise resistance is a quantitative representation in resistance units of the spectral density of a noise-voltage… (More)
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Topic mentions per year

Topic mentions per year

1975-2016
012319752016

Related topics

Related topics

4 relations
Effective input noise temperatureNoiseNoise temperatureSpectral density

Related mentions per year

Related mentions per year

1936-2018
19401960198020002020
Equivalent noise resistance
Spectral density
Noise temperature
Noise
Effective input noise temperature

Papers overview

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2010
2010
Signal-to-Noise Ratio Improvement by Bi-2223 Surface RF Coil in 0.3T MRI System
A Bi-2223 surface RF coil was developed for a 0.3T permanent MRI system to achieve better signal-to-noise ratio (SNR) of images… (More)
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2009
2009
RF Noise of 65-nm MOSFETs in the Weak-to-Moderate-Inversion Region
In this letter, the RF noise performance of 65-nm MOSFETs with 60-, 90-, 130-, and 240-nm drawn gate lengths has been extensively… (More)
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2007
2007
Analytical Determination of MOSFET's High-Frequency Noise Parameters From NF<formula formulatype="inline"><tex>$_{50}$</tex></formula> Measurements and Its Application in RFIC Design
An analytical method, along with closed-form solutions, to determine high-frequency (HF) noise parameters of the MOSFET from its… (More)
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2006
2006
An analytical method to determine MOSFET's high frequency noise parameters from 50-/spl Omega/ noise figure measurements
An analytical method, along with closed-form solutions, for extracting MOSFET's RF noise parameters is presented. This method… (More)
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2004
2004
Comments on "Cryogenic noise parameter measurements of microwave devices"
In regard to [1], the author wishes to make remarks on the following statements presented in the abstract: “In contrast to… (More)
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2004
2004
An analytical high frequency noise model for hot-carrier stressed MOSFETs
This paper proposes a hot-carrier stressed high frequency noise model for MOSFETs. By analytical method, a new fresh and post… (More)
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2003
2003
Analysis of gate shot noise in MOSFETs with ultrathin gate oxides
The impact of gate shot noise associated with gate leakage current in MOSFETs is studied by means of analytical models and… (More)
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2002
2002
Low Frequency Noise in Junction Field Effect Transistors
-Low frequency noise in four-terminal JFETs has been measured as a function of substrate (second gate) bias with temperature and… (More)
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2000
2000
Cryogenic noise parameter measurements of microwave devices
A robust measurement technique, the seven-state-method, which is well suited for noise parameter measurements at cryogenic… (More)
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1975
1975
On the current dependence of low-frequency noise in bipolar transistors
  • M B Das
  • IEEE Transactions on Electron Devices
  • 1975
The bias dependent characteristics of the base input flicker noise or 1/f noise current generator in bipolar transistors is… (More)
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