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Dimenhydrinate 50 MG Oral Tablet [Wal-Dram]
Known as:
Wal-Dram 50 MG Oral Tablet
National Institutes of Health
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8 relations
Croscarmellose Sodium
Dimenhydrinate
Magnesium stearate
Oral Tablet
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Dimenhydrinate 50 MG Oral Tablet
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Getting Rid of the DRAM Capacitor
N. Rodriguez
,
F. Gámiz
,
S. Cristoloveanu
2013
Corpus ID: 63477084
This chapter contains sections titled: Introduction Origins of Floating-Body 1T-DRAMs Second Coming of Floating-Body 1T-DRAMs…
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2011
2011
EL TEATRO FINCA SU FORTALEZA EN SU ESENCIA DRAM TICA
Daniel Giménez Cacho
,
Richard Viqueira
,
L. M. Moncada
,
Enrique Singer
,
H. Granados
2011
Corpus ID: 192382468
LA CONFERENCIA NUEVAS RUTAS DE LA ESCENA GENERO DISTINTOS CUESTIONAMIENTOS SOBRE EL TEATRO, Y EN ESPECIAL SE DEMOSTRO COMO ESTA…
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2006
2006
Vertex Channel Field Effect Transistor (VC-FET) Technology Featuring High Performance and Highly Manufacturable Trench Capacitor DRAM
M. Kido
,
M. Kito
,
+13 authors
A. Nitayama
Symposium on VLSI Technology, . Digest of…
2006
Corpus ID: 28346350
Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first…
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2005
2005
Local-damascene-finFET DRAM integration with p/sup +/ doped poly-silicon gate technology for sub-60nm device generations
Yong-Sung Kim
,
Sang-Hyeon Lee
,
+17 authors
Wonshik Lee
IEEE InternationalElectron Devices Meeting…
2005
Corpus ID: 35719944
We integrate FinFET DRAM in sub-60nm feature size. To avoid severe passing gate effects in FinFET cell array, we introduce a…
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2001
2001
A high performance 100 nm generation SOC technology (CMOS IV) for high density embedded memory and mixed signal LSIs
K. Miyashita
,
T. Nakayama
,
+20 authors
M. Kakumu
Symposium on VLSI Technology. Digest of Technical…
2001
Corpus ID: 31368895
This paper demonstrates a 100 nm generation SOC technology (CMOS IV) for the first time. Three types of core devices are…
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Review
2001
Review
2001
Array transistor design challenges in trench capacitor DRAM technology
Yujun Li
,
J. Sim
,
J. Mandelman
,
K. McStay
,
Q. Ye
,
G. Bronner
International Symposium on VLSI Technology…
2001
Corpus ID: 57638046
BuriEd Strap Trench (BEST) array cell design has been extended for more than 4 generations. However, significant scaling…
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1996
1996
Emulateur memoire dram
R. Muir
1996
Corpus ID: 193129624
L'invention concerne un emulateur de memoire RAM dynamique qui supprime la necessite de code dans la memoire DRAM dans des…
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1996
1996
ボディ-コソトロ-ル回路を用いた低電壓 / 低消費電力 SOI - DRAM ( Low Voltage / Low Power SOI-DRAM with Multiple Body Control Circuits )
천야조언
,
삼하현
,
구가중박
,
부도무수
,
유본화민
1996
Corpus ID: 111066120
1991
1991
The Effects of Electrode Materials on the Electrical Properties of $Ta_2O_5$ Thin Film for DRAM Capacitor
Yeon-wook Kim
,
Gihyeok Gwon
,
Jeong-Min Ha
,
C. Kang
,
Yong-Bin Seon
,
Yeong-Nam Kim
1991
Corpus ID: 136595404
A new electrode material for capacitor was developed to obtain both high dielectric constant and improved electrical properties…
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1983
1983
Dram sanatı : tiyatroya giriş
Özdemir Nutku
1983
Corpus ID: 60335505
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