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Dimenhydrinate 50 MG Oral Tablet [Wal-Dram]

Known as: Wal-Dram 50 MG Oral Tablet 
National Institutes of Health

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8 relations
Croscarmellose SodiumDimenhydrinateMagnesium stearateOral Tablet

Broader (1)

Dimenhydrinate 50 MG Oral Tablet

Papers overview

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2014
2014
A Trustworthy Key Generation Prototype Based on DDR3 PUF for Wireless Sensor Networks
In wireless sensor security systems, the security key of sensor node is usually stored in the non-volatile memory. By capturing… 
2013
2013
Getting Rid of the DRAM Capacitor
This chapter contains sections titled: Introduction Origins of Floating-Body 1T-DRAMs Second Coming of Floating-Body 1T-DRAMs… 
2011
2011
EL TEATRO FINCA SU FORTALEZA EN SU ESENCIA DRAM TICA
LA CONFERENCIA NUEVAS RUTAS DE LA ESCENA GENERO DISTINTOS CUESTIONAMIENTOS SOBRE EL TEATRO, Y EN ESPECIAL SE DEMOSTRO COMO ESTA… 
2006
2006
Çalişma Yaşaminda Psikolojik Bir Dram: MOBBİNG
Çalışma olgusu, bir işyerinde üretim sürecine katılan insanın, öncelikle makine ile olan acımasız mücadelesini anımsatır. Bu m… 
2006
2006
Vertex Channel Field Effect Transistor (VC-FET) Technology Featuring High Performance and Highly Manufacturable Trench Capacitor DRAM
Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first… 
2005
2005
Local-damascene-finFET DRAM integration with p/sup +/ doped poly-silicon gate technology for sub-60nm device generations
We integrate FinFET DRAM in sub-60nm feature size. To avoid severe passing gate effects in FinFET cell array, we introduce a… 
2001
2001
A high performance 100 nm generation SOC technology (CMOS IV) for high density embedded memory and mixed signal LSIs
This paper demonstrates a 100 nm generation SOC technology (CMOS IV) for the first time. Three types of core devices are… 
Review
2001
Review
2001
Array transistor design challenges in trench capacitor DRAM technology
BuriEd Strap Trench (BEST) array cell design has been extended for more than 4 generations. However, significant scaling… 
1991
1991
The Effects of Electrode Materials on the Electrical Properties of $Ta_2O_5$ Thin Film for DRAM Capacitor
A new electrode material for capacitor was developed to obtain both high dielectric constant and improved electrical properties… 
1983
1983
Dram sanatı : tiyatroya giriş
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