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Cloud gaming

Known as: Gaming-on-demand, GaaS, Gaming as a service 
Cloud gaming, sometimes called gaming on demand, is a type of online gaming. Currently there are two main types of cloud gaming: cloud gaming based… 
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
Modeling Resonance-Free Modulation Response in Transistor Lasers With Single and Multiple Quantum Wells in the Base
We have developed the expressions for terminal currents in transistor lasers (TLs) having a single quantum well (SQW) as well as… 
2010
2010
Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors
The authors report the InAs/InGaAs/GaAs/AlGaAs quantum dots-in-double-well (D-DWELL) design, which has a lower strain per DWELL… 
2007
2007
GaInP/GaAs HBT Sub-Harmonic Gilbert Mixers Using Stacked-LO and Leveled-LO Topologies
This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mum GaInP/GaAs HBT technology. High two… 
Highly Cited
2004
Highly Cited
2004
Ku-band InGaP-GaAs HBT MMIC VCOs with balanced and differential topologies
Balanced and differential voltage controlled oscillators (VCOs) are investigated with analytic noise models. Fully integrated… 
2004
2004
Theory of ultrafast nonlinear refraction in semiconductor superlattices
A theoretical study is undertaken into the Kerr nonlinear refraction observable in the transparency window in semiconductor… 
2002
2002
Passively Q-switched self-frequency-doubling Nd3+:GdCa4O(BO3)3 laser with GaAs saturable absorber
Nd 3 + :GdCa 4 O(BO 3 ) 3 , i.e., Nd:GdCOB, is a new self-frequency-doubling laser crystal. By using a GaAs saturable absorber as… 
1995
1995
Intensity-dependent energy and line shape variation of donor-acceptor-pair bands in ZnSe:N at different compensation levels
We show that energy position and line shape of donor–acceptor‐pair luminescence bands in ZnSe:N/GaAs epilayers depend very… 
1992
1992
High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure
GaAs MESFETs were fabricated using a low-temperature-grown (LTG) high-resistivity GaAs layer to passivate the doped channel… 
1990
1990
Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high drain bias values (>4.0 V). The… 
Highly Cited
1976
Highly Cited
1976
Performance of GaAs MESFET Mixers at X Band
A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented… 
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