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Bit cell

A bit cell is the length of tape, the area of disc surface, or the part of an integrated circuit in which a single bit is recorded. The smaller the… Expand
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Recent advances in deep neural networks (DNNs) have shown Binary Neural Networks (BNNs) are able to provide a reasonable accuracy… Expand
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2017
2017
The implementation of the six-transistor (6T) static random access memory cell in deep submicrometer region has become difficult… Expand
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Highly Cited
2016
Highly Cited
2016
Conventional content addressable memory (BCAM and TCAM) uses specialized 10T/16T bit cells that are significantly larger than 6T… Expand
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Highly Cited
2014
Highly Cited
2014
The emergence of spin-transfer torque magnetic RAM (STT-MRAM) as a leading candidate for future high-performance nonvolatile… Expand
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Highly Cited
2012
Highly Cited
2012
Spin-transfer torque magnetic random access memories (STT-MRAM), using magnetic tunnel junctions (MTJ), is a resistive memory… Expand
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Highly Cited
2010
Highly Cited
2010
A compact STT(Spin-Transfer Torque)-RAM with a 14F2 cell was integrated using modified DRAM processes at the 54nm technology node… Expand
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2010
2010
For the first time, Multi-V<inf>T</inf> UTBOX-FDSOI technology for low power applications is demonstrated. We highlight the… Expand
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Highly Cited
2009
Highly Cited
2009
Ultra-low voltage operation of memory cells has become a topic of much interest due to its applications in very low energy… Expand
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Highly Cited
2008
Highly Cited
2008
This paper firstly reports key factors which are to be necessarily considered for the successful two-bit (four-level) cell… Expand
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Highly Cited
2005
Highly Cited
2005
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The… Expand
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