Bit cell

A bit cell is the length of tape, the area of disc surface, or the part of an integrated circuit in which a single bit is recorded. The smaller the… (More)
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Topic mentions per year

Topic mentions per year

1976-2018
020406019762018

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
Spin-transfer torque magnetic random access memories (STT-MRAM), using magnetic tunnel junctions (MTJ), is a resistive memory… (More)
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Highly Cited
2011
Highly Cited
2011
The storage device in spin-transfer torque MRAM (STT-MRAM) is the magnetic tunneling junction (MTJ) and several models for the… (More)
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2010
2010
In this paper, a method for the statistical design of the static-random-access-memory bit cell is proposed to ensure a high… (More)
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Highly Cited
2009
Highly Cited
2009
We propose a quad-node ten transistor (10 T) soft error robust SRAM cell that offers differential read operation for robust… (More)
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Highly Cited
2009
Highly Cited
2009
This paper presents modeling and analysis of 1T-1MTJ STT RAM memory arrays under process variations and thermal disturbances… (More)
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Highly Cited
2008
Highly Cited
2008
This paper firstly reports key factors which are to be necessarily considered for the successful two-bit (four-level) cell… (More)
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Highly Cited
2008
Highly Cited
2008
Ultra-low voltage operation of memory cells has become a topic of much interest due to its applications in very low energy… (More)
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Highly Cited
2006
Highly Cited
2006
The increased importance of lowering power in memory design has produced a trend of operating memories at lower supply voltages… (More)
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Highly Cited
2005
Highly Cited
2005
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The… (More)
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Highly Cited
2005
Highly Cited
2005
This paper evaluates the static noise margin (SNM) of 6T SRAM bitcells operating in sub-threshold. We analyze the dependence of… (More)
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