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4-hydroxybenzoyldehydrotumulosic acid

Known as: HBT-acid 
 
National Institutes of Health

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Highly Cited
2012
Highly Cited
2012
Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends
Monolithically integrated 220- and 320-GHz receiver front-ends manufactured in an engineering version of anfT/fmax=280/435-GHz… Expand
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Highly Cited
2010
Highly Cited
2010
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
A SiGe HBT technology featuring fT/fmax/BVCEO=300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is… Expand
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Highly Cited
2010
Highly Cited
2010
Polymerization of lignosulfonates by the laccase-HBT (1-hydroxybenzotriazole) system improves dispersibility.
The ability of laccases from Trametes villosa (TvL), Myceliophthora thermophila (MtL), Trametes hirsuta (ThL) and Bacillus… Expand
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Highly Cited
2008
Highly Cited
2008
165-GHz Transceiver in SiGe Technology
Two D-band transceivers, with and without amplifiers and static frequency divider, transmitting simultaneously in the 80-GHz and… Expand
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Highly Cited
2008
Highly Cited
2008
A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset
This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT and SiGe… Expand
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Highly Cited
2008
Highly Cited
2008
Spectroscopy and femtosecond dynamics of excited-state proton transfer induced charge transfer reaction.
Fluorescence spectroscopy and femtosecond relaxation dynamics of 2-{[2-(2-hydroxyphenyl)benzo[d]oxazol-6-yl]methylene… Expand
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Highly Cited
2005
Highly Cited
2005
Spatial quantum noise interferometry in expanding ultracold atom clouds
In a pioneering experiment, Hanbury Brown and Twiss (HBT) demonstrated that noise correlations could be used to probe the… Expand
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Highly Cited
2005
Highly Cited
2005
A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications
This paper demonstrates a two-stage 1.95-GHz WCDMA handset RFIC power amplifier (PA) implemented in a 0.25-/spl mu/m SiGe BiCMOS… Expand
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Highly Cited
2003
Highly Cited
2003
Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides
A novel diode-triggered SCR (DTSCR) ESD protection element is introduced for low-voltage application (signal, supply voltage /spl… Expand
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Highly Cited
2001
Highly Cited
2001
A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure
A record 210-GHz f/sub T/ SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA//spl mu/m/sup 2/ is… Expand
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