4-hydroxybenzoyldehydrotumulosic acid

Known as: HBT-acid 
 
National Institutes of Health

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Highly Cited
2012
Highly Cited
2012
Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends
Monolithically integrated 220- and 320-GHz receiver front-ends manufactured in an engineering version of anfT/fmax=280/435-GHz… (More)
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Highly Cited
2010
Highly Cited
2010
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
A SiGe HBT technology featuring fT/fmax/BVCEO=300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is… (More)
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Highly Cited
2008
Highly Cited
2008
A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset
This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT and SiGe… (More)
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Highly Cited
2008
Highly Cited
2008
165-GHz Transceiver in SiGe Technology
Two D-band transceivers, with and without amplifiers and static frequency divider, transmitting simultaneously in the 80-GHz and… (More)
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Highly Cited
2008
Highly Cited
2008
Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging
This paper presents the first single-chip direct-conversion 77-85 GHz transceiver fabricated in SiGe HBT technology, intended for… (More)
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2007
2007
80/160-GHz Transceiver and 140-GHz Amplifier in SiGe Technology
A dual-band mm-wave imaging transceiver, transmitting and receiving simultaneously in the 80-GHz and 160-GHz bands, is fabricated… (More)
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2005
2005
A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications
This paper demonstrates a two-stage 1.95-GHz WCDMA handset RFIC power amplifier (PA) implemented in a 0.25-/spl mu/m SiGe BiCMOS… (More)
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Highly Cited
2003
Highly Cited
2003
Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides
A novel diode-triggered SCR (DTSCR) ESD protection element is introduced for low-voltage application (signal, supply voltage /spl… (More)
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Highly Cited
1999
Highly Cited
1999
A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth
 
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Highly Cited
1995
Highly Cited
1995
A 3.2-GHz second-order delta-sigma modulator implemented in InP HBT technology
 
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