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4-hydroxybenzoyldehydrotumulosic acid

Known as: HBT-acid 
National Institutes of Health

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Papers overview

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Highly Cited
2019
Highly Cited
2019
A 16-QAM 100-Gb/s 1-M Wireless Link With an EVM of 17% at 230 GHz in an SiGe Technology
This letter presents a 1-m wireless link established with a set of fundamentally operated Tx/Rx direct-conversion in-phase and… 
Highly Cited
2016
Highly Cited
2016
SiGe HBT with fx/fmax of 505 GHz/720 GHz
An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay… 
Highly Cited
2015
Highly Cited
2015
SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project
This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP… 
Highly Cited
2012
Highly Cited
2012
Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends
Monolithically integrated 220- and 320-GHz receiver front-ends manufactured in an engineering version of anfT/fmax=280/435-GHz… 
Highly Cited
2010
Highly Cited
2010
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
A SiGe HBT technology featuring fT/fmax/BVCEO=300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is… 
Highly Cited
2010
Highly Cited
2010
Polymerization of lignosulfonates by the laccase-HBT (1-hydroxybenzotriazole) system improves dispersibility.
Highly Cited
2008
Highly Cited
2008
165-GHz Transceiver in SiGe Technology
Two D-band transceivers, with and without amplifiers and static frequency divider, transmitting simultaneously in the 80-GHz and… 
Highly Cited
2008
Highly Cited
2008
A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset
This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT and SiGe… 
Highly Cited
2006
Highly Cited
2006
The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation
The design of ultra-wideband (UWB) low-noise amplifiers (LNAs) require additional circuit design principles, which differ from… 
Highly Cited
2003
Highly Cited
2003
Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides
A novel diode-triggered SCR (DTSCR) ESD protection element is introduced for low-voltage application (signal, supply voltage /spl… 
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