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4-hydroxybenzoyldehydrotumulosic acid
Known as:
HBT-acid
National Institutes of Health
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2013
2013
160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With ${P}_{\rm sat}$ in Excess of 10 dBm
N. Sarmah
,
P. Chevalier
,
U. Pfeiffer
IEEE transactions on microwave theory and…
2013
Corpus ID: 18757691
Power amplifier (PA) design for 160-GHz applications in an advanced SiGe heterojunction bipolar transistor (HBT) technology with…
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2011
2011
A 122 GHz Sub-Harmonic Mixer With a Modified APDP Topology for IC Integration
Yaoming Sun
,
C. Scheytt
IEEE Microwave and Wireless Components Letters
2011
Corpus ID: 31955631
This letter presents a modified passive subharmonic mixer (SHM) topology based on an anti-parallel-diode-pair (APDP). It features…
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Highly Cited
2008
Highly Cited
2008
Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging
S. Nicolson
,
P. Chevalier
,
B. Sautreuil
,
S. Voinigescu
IEEE Journal of Solid-State Circuits
2008
Corpus ID: 46058983
This paper presents the first single-chip direct-conversion 77-85 GHz transceiver fabricated in SiGe HBT technology, intended for…
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Highly Cited
2008
Highly Cited
2008
A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules
J. Comeau
,
M. Morton
,
+6 authors
M. Mitchell
IEEE Journal of Solid-State Circuits
2008
Corpus ID: 40476072
This work investigates the potential of commercially-available silicon-germanium (SiGe) BiCMOS technology for X-band transmit…
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Highly Cited
2005
Highly Cited
2005
A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications
J. Deng
,
P. Gudem
,
L. Larson
,
D. Kimball
,
P. Asbeck
IEEE Journal of Solid-State Circuits
2005
Corpus ID: 2976977
This paper demonstrates a two-stage 1.95-GHz WCDMA handset RFIC power amplifier (PA) implemented in a 0.25-/spl mu/m SiGe BiCMOS…
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2004
2004
Thermal limitations of InP HBTs in 80- and 160-gb ICs
I. Harrison
,
M. Dahlstrom
,
S. Krishnan
,
Z. Griffith
,
Y. Kim
,
M. Rodwell
IEEE Transactions on Electron Devices
2004
Corpus ID: 43108575
Bipolar transistor scaling laws indicate that the dissipated power per unit collector-junction area increases in proportion to…
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1997
1997
130-GHz f/sub T/ SiGe HBT technology
K. Oda
,
E. Ohue
,
M. Tanabe
,
H. Shimamotot
,
T. Onai
,
K. Washio
International Electron Devices Meeting. IEDM…
1997
Corpus ID: 38382371
A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good…
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1997
1997
A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay
K. Washio
,
E. Ohue
,
M. Tanabe
,
H. Shimamoto
,
T. Onai
International Electron Devices Meeting. IEDM…
1997
Corpus ID: 43734704
A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is…
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1996
1996
Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits
L. Larson
,
M. Case
,
+9 authors
S. Maas
IEEE International Solid-State Circuits…
1996
Corpus ID: 20084566
This silicon-based microwave integrated-circuit technology is suitable for implementation of high-performance low-cost active…
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1995
1995
Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's
J. Babcock
,
J. Cressler
,
L. Vempati
,
S. Clark
,
R. Jaeger
,
D. Harame
IEEE Electron Device Letters
1995
Corpus ID: 11503677
The effect of ionizing radiation on both the electrical and 1/f noise characteristics of advanced UHV/CVD SiGe HBT's is reported…
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