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4-hydroxybenzoyldehydrotumulosic acid

Known as: HBT-acid 
National Institutes of Health

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Papers overview

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2013
2013
160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With ${P}_{\rm sat}$ in Excess of 10 dBm
Power amplifier (PA) design for 160-GHz applications in an advanced SiGe heterojunction bipolar transistor (HBT) technology with… 
2011
2011
A 122 GHz Sub-Harmonic Mixer With a Modified APDP Topology for IC Integration
This letter presents a modified passive subharmonic mixer (SHM) topology based on an anti-parallel-diode-pair (APDP). It features… 
Highly Cited
2008
Highly Cited
2008
Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging
This paper presents the first single-chip direct-conversion 77-85 GHz transceiver fabricated in SiGe HBT technology, intended for… 
Highly Cited
2008
Highly Cited
2008
A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules
This work investigates the potential of commercially-available silicon-germanium (SiGe) BiCMOS technology for X-band transmit… 
Highly Cited
2005
Highly Cited
2005
A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications
This paper demonstrates a two-stage 1.95-GHz WCDMA handset RFIC power amplifier (PA) implemented in a 0.25-/spl mu/m SiGe BiCMOS… 
2004
2004
Thermal limitations of InP HBTs in 80- and 160-gb ICs
Bipolar transistor scaling laws indicate that the dissipated power per unit collector-junction area increases in proportion to… 
1997
1997
130-GHz f/sub T/ SiGe HBT technology
A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good… 
1997
1997
A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay
A selective-epitaxial SiGe base heterojunction bipolar transistor (HBT) with self-aligned stacked metal/IDP (SMI) electrodes is… 
1996
1996
Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits
This silicon-based microwave integrated-circuit technology is suitable for implementation of high-performance low-cost active… 
1995
1995
Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's
The effect of ionizing radiation on both the electrical and 1/f noise characteristics of advanced UHV/CVD SiGe HBT's is reported… 
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