InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric

@article{Mao2013InAlNAlNGaNFM,
  title={InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric},
  author={Wei Mao and Yue Hao and Cui Yang and Jincheng Zhang and Xiao-hua Ma and Chong Wang and Hong-xia Liu and Lin-An Yang and Jinfeng Zhang and Xuefeng Zheng and Kai Zhang and Yong-he Chen and Li-Yuan Yang},
  journal={Chinese Physics Letters},
  year={2013},
  volume={30},
  pages={058502},
  url={https://api.semanticscholar.org/CorpusID:124039051}
}
We report the studies of In0.15Al0.85N/AlN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors with a field plate (FP) and a plasma-enhanced chemical vapor deposition (PECVD) SiN layer as the gate dielectric as well as the surface passivation layer (FP-MIS HEMTs). Compared with conventional In0.15Al0.85N/AlN/GaN high electron mobility transistors (HEMTs) of the same dimensions, the FP-MIS HEMTs exhibit a maximum drain current of 1211 mA/mm, a breakdown voltage of 120V, an… 
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19 References

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