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gallium nitrate

Known as: GaN, gallium nitrate [Chemical/Ingredient] 
A hydrated nitrate salt of the group IIIa element gallium with potential use in the treatment of malignancy-associated hypercalcemia. Gallium nitrate… 
National Institutes of Health

Related topics

Related topics

11 relations

Broader (2)

Antineoplastic AgentsGallium
Bone Resorption InhibitionDrug AllergyHypercalcemiaKidney Diseases

Narrower (2)

GaniteNSC 15200

Papers overview

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Highly Cited
2011
Highly Cited
2011
The effect of Bi composition to the optical quality of GaAs1−xBix
GaAs1−xBix alloys grown by molecular beam epitaxy for x up to 0.06 were studied by photoluminescence (PL). The results indicate… 
Highly Cited
2005
Highly Cited
2005
Ferromagnetism in Mn-doped GaN nanowires.
Using density functional theory we show that the magnetic coupling of Mn atoms in the nanowires, unlike that in the thin film, is… 
Highly Cited
2003
Highly Cited
2003
Selective MOCVD growth of ZnO nanotips
ZnO is a wide bandgap semiconductor with a direct bandgap of 3.32eV at room temperature. It is a candidate material for… 
Highly Cited
2002
Highly Cited
2002
Pyrolysis approach to the synthesis of gallium nitride nanorods
Herein we describe a pyrolysis route to the synthesis of gallium nitride (GaN) nanorods. GaN nanorods have been grown by the… 
Highly Cited
2000
Highly Cited
2000
Modeling of a GaN-based light-emitting diode for uniform current spreading
The characteristics of the GaN/InGaN multiquantum-well light-emitting diode (LED) have been examined from the view point of… 
Highly Cited
1999
Highly Cited
1999
Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment
Two-step surface treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after… 
Highly Cited
1997
Highly Cited
1997
GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer
We have demonstrated that GaN can be grown epitaxially by atmospheric pressure metalorganic chemical vapor deposition on an… 
Highly Cited
1994
Highly Cited
1994
Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
Polycrystalline silicon films have been deposited on glass substrates at 350 °C by radio‐frequency plasma‐enhanced chemical vapor… 
Highly Cited
1993
Highly Cited
1993
Electron-spin-resonance studies of donors in wurtzite GaN.
Electron-spin-resonance (ESR) measurements have been performed on a series of wurtzite GaN films grown on sapphire substrates by… 
Highly Cited
1986
Highly Cited
1986
Optical absorption of some polymers in the region 240-170 nm
Absorption coefficients for some technologically important polymer materials are given in the wavelength range ∼240–170 nm… 
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