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aluminum gallium nitride

Known as: AlGaN 
 
National Institutes of Health

Papers overview

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Review
2019
Review
2019
By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral… Expand
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Highly Cited
2012
Highly Cited
2012
Self-heating is a severe problem for high-power gallium nitride (GaN) electronic and optoelectronic devices. Various thermal… Expand
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Highly Cited
2007
Highly Cited
2007
We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor… Expand
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Highly Cited
2006
Highly Cited
2006
Compact high-efficiency ultraviolet solid-state light sources—such as light-emitting diodes (LEDs) and laser diodes—are of… Expand
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Highly Cited
2006
Highly Cited
2006
A recessed-gate structure has been studied with a view to realizing normally off operation of high-voltage AlGaN/GaN high… Expand
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Highly Cited
2006
Highly Cited
2006
We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high… Expand
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Highly Cited
2006
Highly Cited
2006
A self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high… Expand
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Highly Cited
2003
Highly Cited
2003
Diode ideality factors much higher than the expected values of 1.0 to 2.0 have been reported in GaN-based p-n junctions. It is… Expand
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Highly Cited
2001
Highly Cited
2001
  • Ján Kuzmík
  • IEEE Electron Device Letters
  • 2001
  • Corpus ID: 33581542
We compare basic physical parameters of Al/sub 0.2/Ga/sub 0.8/N-GaN quantum well with In/sub 0.17/Al/sub 0.83/N/GaN and In/sub 0… Expand
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Highly Cited
1999
Highly Cited
1999
Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN… Expand
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