aluminum gallium nitride

Known as: AlGaN 
 

Topic mentions per year

Topic mentions per year

1991-2018
010020019912018

Papers overview

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Highly Cited
2008
Highly Cited
2008
This letter reports normally-off operation of an AlGaN/GaN recessed MIS-gate heterostructure field-effect transistor with a high… (More)
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Highly Cited
2007
Highly Cited
2007
A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed here. This… (More)
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Highly Cited
2006
Highly Cited
2006
Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of… (More)
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Highly Cited
2005
Highly Cited
2005
We report a novel approach in fabricating high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs. The fabrication technique… (More)
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Highly Cited
2005
Highly Cited
2005
We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by… (More)
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Highly Cited
2004
Highly Cited
2004
Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements… (More)
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Highly Cited
2003
Highly Cited
2003
AlGaN-GaN heterojunction field-effect transistors (HFETs) with a field modulating plate (FP) were fabricated on an SiC substrate… (More)
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Highly Cited
2002
Highly Cited
2002
We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire… (More)
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Highly Cited
2001
Highly Cited
2001
We compare basic physical parameters of Al/sub 0.2/Ga/sub 0.8/N-GaN quantum well with In/sub 0.17/Al/sub 0.83/N/GaN and In/sub 0… (More)
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Highly Cited
2000
Highly Cited
2000
We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results… (More)
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